Dielectric properties of PMMA-SiO2 hybrid films

Handle URI:
http://hdl.handle.net/10754/564274
Title:
Dielectric properties of PMMA-SiO2 hybrid films
Authors:
Morales-Acosta, M. D.; Quevedo-López, Manuel Angel Quevedo; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Gnade, Bruce E.; Ramírez-Bon, Rafael
Abstract:
Organic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Functional Nanomaterials and Devices Research Group
Publisher:
Trans Tech Publications
Journal:
Materials Science Forum
Conference/Event name:
1st Joint Advanced Electron Microscopy School for Nanomaterials and the Workshop on Nanomaterials, AEM-NANOMAT'09
Issue Date:
Mar-2010
DOI:
10.4028/www.scientific.net/MSF.644.25
Type:
Conference Paper
ISSN:
02555476
ISBN:
087849281X; 9780878492817
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorMorales-Acosta, M. D.en
dc.contributor.authorQuevedo-López, Manuel Angel Quevedoen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorGnade, Bruce E.en
dc.contributor.authorRamírez-Bon, Rafaelen
dc.date.accessioned2015-08-04T06:21:42Zen
dc.date.available2015-08-04T06:21:42Zen
dc.date.issued2010-03en
dc.identifier.isbn087849281X; 9780878492817en
dc.identifier.issn02555476en
dc.identifier.doi10.4028/www.scientific.net/MSF.644.25en
dc.identifier.urihttp://hdl.handle.net/10754/564274en
dc.description.abstractOrganic-inorganic hybrid films were synthesized by a modified sol-gel process. PMMASiO2 films were prepared using methylmethacrylate (MMA), tetraethil-orthosilicate (TEOS) as silicon dioxide source, and 3-trimetoxi-silil-propil-methacrylate (TMSPM) as coupling agent. FTIR measurements were performed on the hybrid films to confirm the presence of PMMA-SiO2 bonding. In addition, metal-insulator-metal (MIM) devices were fabricated to study the dielectric constant of the films as function of frequency (1 KHz to 1 MHz). Electrical results show a weak trend of the dielectric constant of the hybrid films with MMA molar ratio. More importantly, the PMMA-SiO2 hybrid films showed a higher dielectric constant than SiO2 and PMMA layers, which is likely due to the presence of additional C-O-C bond. © (2010) Trans Tech Publications.en
dc.publisherTrans Tech Publicationsen
dc.subjectCapacitoren
dc.subjectFlexible electronicsen
dc.subjectHybrid gate dielectricen
dc.subjectHybrid pmma-SiO2en
dc.subjectOrganic-inorganic materialsen
dc.titleDielectric properties of PMMA-SiO2 hybrid filmsen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalMaterials Science Forumen
dc.conference.date29 September 2009 through 2 October 2009en
dc.conference.name1st Joint Advanced Electron Microscopy School for Nanomaterials and the Workshop on Nanomaterials, AEM-NANOMAT'09en
dc.conference.locationSaltillo, Coahuilaen
dc.contributor.institutionCINVESTAV, Libram. Norponiente 2000 Fracc. Real de Juriquilla, Querétaro 76230, Qro., Mexicoen
dc.contributor.institutionDepartment of Material Science and Engineering, University of Texas at Dallas, Richardson 75083, TX, United Statesen
kaust.authorAlshareef, Husam N.en
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