Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route

Handle URI:
http://hdl.handle.net/10754/564273
Title:
Structural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini route
Authors:
García-Cerda, L. A.; Puente-Urbina, B. A.; Quevedo-López, Manuel Angel Quevedo; Gnade, Bruce E.; Baldenegro-Pérez, Leonardo Aurelio; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Hernández-Landaverde, Martín Adelaido
Abstract:
In this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm. © (2010) Trans Tech Publications.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Functional Nanomaterials and Devices Research Group
Publisher:
Trans Tech Publications
Journal:
Materials Science Forum
Conference/Event name:
1st Joint Advanced Electron Microscopy School for Nanomaterials and the Workshop on Nanomaterials, AEM-NANOMAT'09
Issue Date:
Mar-2010
DOI:
10.4028/www.scientific.net/MSF.644.113
Type:
Conference Paper
ISSN:
02555476
ISBN:
087849281X; 9780878492817
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorGarcía-Cerda, L. A.en
dc.contributor.authorPuente-Urbina, B. A.en
dc.contributor.authorQuevedo-López, Manuel Angel Quevedoen
dc.contributor.authorGnade, Bruce E.en
dc.contributor.authorBaldenegro-Pérez, Leonardo Aurelioen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorHernández-Landaverde, Martín Adelaidoen
dc.date.accessioned2015-08-04T06:21:38Zen
dc.date.available2015-08-04T06:21:38Zen
dc.date.issued2010-03en
dc.identifier.isbn087849281X; 9780878492817en
dc.identifier.issn02555476en
dc.identifier.doi10.4028/www.scientific.net/MSF.644.113en
dc.identifier.urihttp://hdl.handle.net/10754/564273en
dc.description.abstractIn this study, HfxZr1-xO2 (0 < x < 1) thin films were deposited on silicon wafers using a dip-coating technique and by using a precursor solution prepared by the Pechini route. The effects of annealing temperature on the structure and morphological properties of the proposed films were investigated. HfxZr1-xO2 thin films with 1, 3 and 5 layers were annealed in air for 2 h at 600 and 800 °C and the structural and morphological properties studied by X-ray diffraction (XRD) and scanning electron microscopy (SEM). XRD results show that the films have monoclinic and tetragonal structure depending of the Hf and Zr concentration. SEM photographs show that all films consist of nanocrystalline grains with sizes in the range of 6 - 13 nm. The total film thickness is about 90 nm. © (2010) Trans Tech Publications.en
dc.publisherTrans Tech Publicationsen
dc.subjectDielectric materialsen
dc.subjectHafnium oxideen
dc.subjectPechini routeen
dc.subjectThin filmsen
dc.subjectZirconium oxideen
dc.titleStructural and morphological properties of HfxZr 1-xO2 thin films prepared by Pechini routeen
dc.typeConference Paperen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalMaterials Science Forumen
dc.conference.date29 September 2009 through 2 October 2009en
dc.conference.name1st Joint Advanced Electron Microscopy School for Nanomaterials and the Workshop on Nanomaterials, AEM-NANOMAT'09en
dc.conference.locationSaltillo, Coahuilaen
dc.contributor.institutionCentro de Investigación en Química Aplicada, Departamento de Materiales Avanzados, Blvd. Enrique Reyna Hermosillo 140, C.P. 25253, Saltillo, Coahuila, Mexicoen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX, 75080, United Statesen
dc.contributor.institutionCentro de Investigación y de Estudios Avanzados Del IPN, Libramiento Norponiente 2000, C.P. 76010, Santiago de Querétaro, Qro., Mexicoen
kaust.authorAlshareef, Husam N.en
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