Gain optimization method of a DQW superluminescent diode with broad multi-state emission

Handle URI:
http://hdl.handle.net/10754/564267
Title:
Gain optimization method of a DQW superluminescent diode with broad multi-state emission
Authors:
Dimas, Clara E.; Djie, Hery Susanto; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
Optimizing gain through systematic methods of varying current injection schemes analytically is significant to maximize experimentally device yield and evaluation. Various techniques are used to calculate the amplified spontaneous emission (ASE) gain for light emitting devices consisting of single-section and multiple-sections of even length. Recently double quantum well (DQW) superluminescent diodes (SLD) have shown a broad multi-state emission due to mutlielectrodes of non-equal lengths and at high non-equal current densities. In this study, we adopt an improved method utilizing an ASE intensity ratio to calibrate a gain curve based on the sum of the measured ASE spectra to efficiently estimate the gain. Although the laser gain for GaAs/AlGaAs material is well studied, the ASE gain of SLD devices has not been systematically studied particular to further explain the multiple-state emission observed in fabricated devices. In addition a unique gain estimate was achieved where the excited state gain clamps prior to the ground state due to approaching saturation levels. In our results, high current densities in long sectioned active regions achieved sufficient un-truncated gain that show evidence of excited state emission has been observed.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Photonics Laboratory
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2010 Photonics Global Conference
Conference/Event name:
2010 Photonics Global Conference, PGC 2010
Issue Date:
2010
DOI:
10.1109/PGC.2010.5706118
Type:
Conference Paper
ISBN:
9781424498826
Appears in Collections:
Conference Papers; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorDimas, Clara E.en
dc.contributor.authorDjie, Hery Susantoen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-04T06:21:22Zen
dc.date.available2015-08-04T06:21:22Zen
dc.date.issued2010en
dc.identifier.isbn9781424498826en
dc.identifier.doi10.1109/PGC.2010.5706118en
dc.identifier.urihttp://hdl.handle.net/10754/564267en
dc.description.abstractOptimizing gain through systematic methods of varying current injection schemes analytically is significant to maximize experimentally device yield and evaluation. Various techniques are used to calculate the amplified spontaneous emission (ASE) gain for light emitting devices consisting of single-section and multiple-sections of even length. Recently double quantum well (DQW) superluminescent diodes (SLD) have shown a broad multi-state emission due to mutlielectrodes of non-equal lengths and at high non-equal current densities. In this study, we adopt an improved method utilizing an ASE intensity ratio to calibrate a gain curve based on the sum of the measured ASE spectra to efficiently estimate the gain. Although the laser gain for GaAs/AlGaAs material is well studied, the ASE gain of SLD devices has not been systematically studied particular to further explain the multiple-state emission observed in fabricated devices. In addition a unique gain estimate was achieved where the excited state gain clamps prior to the ground state due to approaching saturation levels. In our results, high current densities in long sectioned active regions achieved sufficient un-truncated gain that show evidence of excited state emission has been observed.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleGain optimization method of a DQW superluminescent diode with broad multi-state emissionen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal2010 Photonics Global Conferenceen
dc.conference.date14 December 2010 through 16 December 2010en
dc.conference.name2010 Photonics Global Conference, PGC 2010en
dc.conference.locationOrcharden
dc.contributor.institutionDepartment of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA 18015, United Statesen
dc.contributor.institutionMasdar Institute, United Arab Emiratesen
dc.contributor.institutionJDS Uniphase, United Statesen
kaust.authorOoi, Boon S.en
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