A new paradigm in the design of energy-efficient digital circuits using laterally-actuated double-gate NEMS

Handle URI:
http://hdl.handle.net/10754/564261
Title:
A new paradigm in the design of energy-efficient digital circuits using laterally-actuated double-gate NEMS
Authors:
Dadgour, Hamed F.; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 ) ; Banerjee, Kaustav
Abstract:
Nano-Electro-Mechanical Switches (NEMS) offer the prospect of improved energy-efficiency in digital circuits due to their near-zero subthreshold leakage and extremely low subthreshold swing values. Among the different approaches of implementing NEMS, laterallyactuated double-gate NEMS devices have attracted much attention as they provide unique and exciting circuit design opportunities. For instance, this paper demonstrates that compact XOR/XNOR gates can be implemented using only two such NEMS transistors. While this in itself is a major improvement, its implications for minimizing Boolean functions using Karnaugh maps (K-maps) are even more significant. In the standard K-map technique, which is used in digital circuit design, adjacent "1s" (minterms) are grouped only in horizontal and/or vertical directions; the diagonal (or zig-zag) grouping of adjacent "1s" is not an option due to the absence of compact XOR/XNOR gates. However, this work demonstrates, for the first time ever, that in lateral double-gate NEMS-based circuits, grouping of minterms is possible in horizontal and vertical as well as diagonal fashions. This is because the diagonal groupings of minterms require XOR/XNOR operations, which are available in such NEMS-based circuits at minimal costs. This novel design paradigm facilitates more compact implementations of Boolean functions and thus, considerably improves their energy-efficiency. For example, a lateral NEMS-based full-adder is implemented using less than half the number of transistors, which is required by a CMOS-based full-adder. Furthermore, circuit simulations are performed to evaluate the energy-efficiencies of the NEMS-based 32-bit carry-save adders compared to their standard CMOS-based counterparts. Copyright 2010 ACM.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Integrated Nanotechnology Lab
Publisher:
Association for Computing Machinery (ACM)
Journal:
Proceedings of the 16th ACM/IEEE international symposium on Low power electronics and design - ISLPED '10
Conference/Event name:
16th ACM/IEEE International Symposium on Low-Power Electronics and Design, ISLPED'10
Issue Date:
2010
DOI:
10.1145/1840845.1840848
Type:
Conference Paper
ISSN:
15334678
ISBN:
9781450301466
Appears in Collections:
Conference Papers; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorDadgour, Hamed F.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.contributor.authorBanerjee, Kaustaven
dc.date.accessioned2015-08-04T06:21:07Zen
dc.date.available2015-08-04T06:21:07Zen
dc.date.issued2010en
dc.identifier.isbn9781450301466en
dc.identifier.issn15334678en
dc.identifier.doi10.1145/1840845.1840848en
dc.identifier.urihttp://hdl.handle.net/10754/564261en
dc.description.abstractNano-Electro-Mechanical Switches (NEMS) offer the prospect of improved energy-efficiency in digital circuits due to their near-zero subthreshold leakage and extremely low subthreshold swing values. Among the different approaches of implementing NEMS, laterallyactuated double-gate NEMS devices have attracted much attention as they provide unique and exciting circuit design opportunities. For instance, this paper demonstrates that compact XOR/XNOR gates can be implemented using only two such NEMS transistors. While this in itself is a major improvement, its implications for minimizing Boolean functions using Karnaugh maps (K-maps) are even more significant. In the standard K-map technique, which is used in digital circuit design, adjacent "1s" (minterms) are grouped only in horizontal and/or vertical directions; the diagonal (or zig-zag) grouping of adjacent "1s" is not an option due to the absence of compact XOR/XNOR gates. However, this work demonstrates, for the first time ever, that in lateral double-gate NEMS-based circuits, grouping of minterms is possible in horizontal and vertical as well as diagonal fashions. This is because the diagonal groupings of minterms require XOR/XNOR operations, which are available in such NEMS-based circuits at minimal costs. This novel design paradigm facilitates more compact implementations of Boolean functions and thus, considerably improves their energy-efficiency. For example, a lateral NEMS-based full-adder is implemented using less than half the number of transistors, which is required by a CMOS-based full-adder. Furthermore, circuit simulations are performed to evaluate the energy-efficiencies of the NEMS-based 32-bit carry-save adders compared to their standard CMOS-based counterparts. Copyright 2010 ACM.en
dc.publisherAssociation for Computing Machinery (ACM)en
dc.subjectBoolean logic minimizationen
dc.subjectEnergy-efficient electronicsen
dc.subjectLaterally-actuated NEMSen
dc.subjectNanoelectromechanical switchesen
dc.subjectXOR gatesen
dc.titleA new paradigm in the design of energy-efficient digital circuits using laterally-actuated double-gate NEMSen
dc.typeConference Paperen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journalProceedings of the 16th ACM/IEEE international symposium on Low power electronics and design - ISLPED '10en
dc.conference.date18 August 2010 through 20 August 2010en
dc.conference.name16th ACM/IEEE International Symposium on Low-Power Electronics and Design, ISLPED'10en
dc.conference.locationAustin, TXen
dc.contributor.institutionDepartment of Electrical and Computer Engineering, University of California, Santa Barbara, United Statesen
kaust.authorHussain, Muhammad Mustafaen
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