The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure

Handle URI:
http://hdl.handle.net/10754/564239
Title:
The effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structure
Authors:
Tan, Cheeloon; Djie, Hery Susanto; Tan, C. K.; Hongpinyo, V.; Ding, Yunhsiang; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We demonstrate the importance of multi active layer stacking in realizing a semiconductor broadband quantum-dash-in-well laser. The photoluminescence measurements show the negligible factor of largely localized inhomogeneous quantum-dash ensembles in producing ultra-wide envelope of emission. © 2009 IEEE.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Photonics Laboratory
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
2009 IEEE LEOS Annual Meeting Conference Proceedings
Conference/Event name:
2009 IEEE LEOS Annual Meeting Conference, LEOS '09
Issue Date:
Oct-2009
DOI:
10.1109/LEOS.2009.5343093
Type:
Conference Paper
ISSN:
10928081
ISBN:
9781424436804
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTan, Cheeloonen
dc.contributor.authorDjie, Hery Susantoen
dc.contributor.authorTan, C. K.en
dc.contributor.authorHongpinyo, V.en
dc.contributor.authorDing, Yunhsiangen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-08-04T06:20:16Zen
dc.date.available2015-08-04T06:20:16Zen
dc.date.issued2009-10en
dc.identifier.isbn9781424436804en
dc.identifier.issn10928081en
dc.identifier.doi10.1109/LEOS.2009.5343093en
dc.identifier.urihttp://hdl.handle.net/10754/564239en
dc.description.abstractWe demonstrate the importance of multi active layer stacking in realizing a semiconductor broadband quantum-dash-in-well laser. The photoluminescence measurements show the negligible factor of largely localized inhomogeneous quantum-dash ensembles in producing ultra-wide envelope of emission. © 2009 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.titleThe effect of multi active junctions on broadband emission from InAs/InGaAlAs quantum-dash structureen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journal2009 IEEE LEOS Annual Meeting Conference Proceedingsen
dc.conference.date4 October 2009 through 8 October 2009en
dc.conference.name2009 IEEE LEOS Annual Meeting Conference, LEOS '09en
dc.conference.locationBelek-Antalyaen
dc.contributor.institutionCenter for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, PA, United Statesen
dc.contributor.institutionJDS Uniphase Corporation, San Jose, CA, United Statesen
dc.contributor.institutionDepartment of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JD, United Kingdomen
kaust.authorOoi, Boon S.en
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