Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

Handle URI:
http://hdl.handle.net/10754/564182
Title:
Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Young, Chadwin D.; Bersuker, Gennadi; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Reliability
Issue Date:
Jun-2015
DOI:
10.1109/TR.2014.2371054
Type:
Article
ISSN:
00189529
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorYoung, Chadwin D.en
dc.contributor.authorBersuker, Gennadien
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T12:35:27Zen
dc.date.available2015-08-03T12:35:27Zen
dc.date.issued2015-06en
dc.identifier.issn00189529en
dc.identifier.doi10.1109/TR.2014.2371054en
dc.identifier.urihttp://hdl.handle.net/10754/564182en
dc.description.abstractWe report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectFlexibleen
dc.subjectlifetime projectionen
dc.subjectmetal oxide semiconductor capacitorsen
dc.subjecttime dependent dielectric breakdownen
dc.subjectvoltage breakdownen
dc.subjectWeibull distributionen
dc.titleElectrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline siliconen
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalIEEE Transactions on Reliabilityen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas, Dallas, TX, United Statesen
dc.contributor.institutionSEMATECH, Inc., Albany, NY, United Statesen
kaust.authorGhoneim, Mohamed T.en
kaust.authorRojas, Jhonathan Prietoen
kaust.authorHussain, Muhammad Mustafaen
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