AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

Handle URI:
http://hdl.handle.net/10754/564088
Title:
AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE
Authors:
Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao ( 0000-0002-9582-1068 ) ; Li, Jinmin
Abstract:
In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab
Publisher:
Elsevier BV
Journal:
Journal of Crystal Growth
Issue Date:
Mar-2015
DOI:
10.1016/j.jcrysgro.2014.10.015
Type:
Article
ISSN:
00220248
Sponsors:
This work was supported by the National Natural Sciences Foundation of China under Grant Nos. 61376047, 61376090, 61204053 and 51102226, by the National High Technology Program of China under Grant No. 2014AA032608 and 2011AA03A111, by the National Basic Research Program of China No. 2012CB619306, and the National 1000 Young Talents Program.
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorYan, Jianchangen
dc.contributor.authorWang, Junxien
dc.contributor.authorZhang, Yunen
dc.contributor.authorCong, Peipeien
dc.contributor.authorSun, Lilien
dc.contributor.authorTian, Yingdongen
dc.contributor.authorZhao, Chaoen
dc.contributor.authorLi, Jinminen
dc.date.accessioned2015-08-03T12:31:34Zen
dc.date.available2015-08-03T12:31:34Zen
dc.date.issued2015-03en
dc.identifier.issn00220248en
dc.identifier.doi10.1016/j.jcrysgro.2014.10.015en
dc.identifier.urihttp://hdl.handle.net/10754/564088en
dc.description.abstractIn this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.en
dc.description.sponsorshipThis work was supported by the National Natural Sciences Foundation of China under Grant Nos. 61376047, 61376090, 61204053 and 51102226, by the National High Technology Program of China under Grant No. 2014AA032608 and 2011AA03A111, by the National Basic Research Program of China No. 2012CB619306, and the National 1000 Young Talents Program.en
dc.publisherElsevier BVen
dc.subjectDefectsen
dc.subjectLight-emitting diodeen
dc.subjectMetalorganic vapor phase epitaxyen
dc.subjectNitridesen
dc.subjectSemiconducting aluminum compoundsen
dc.titleAlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPEen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalJournal of Crystal Growthen
dc.contributor.institutionSemiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences (CAS)Beijing, Chinaen
kaust.authorZhao, Chaoen
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