Engineering light outcoupling in 2D materials

Handle URI:
http://hdl.handle.net/10754/564054
Title:
Engineering light outcoupling in 2D materials
Authors:
Lien, Derhsien; Kang, Jeongseuk; Amani, Matin; Chen, Kevin; Tosun, Mahmut; Wang, Hsinping; Roy, Tania; Eggleston, Michael S.; Wu, Ming C.; Dubey, Madan; Lee, Sichen; He, Jr-Hau ( 0000-0003-1886-9241 ) ; Javey, Ali
Abstract:
When light is incident on 2D transition metal dichalcogenides (TMDCs), it engages in multiple reflections within underlying substrates, producing interferences that lead to enhancement or attenuation of the incoming and outgoing strength of light. Here, we report a simple method to engineer the light outcoupling in semiconducting TMDCs by modulating their dielectric surroundings. We show that by modulating the thicknesses of underlying substrates and capping layers, the interference caused by substrate can significantly enhance the light absorption and emission of WSe2, resulting in a ∼11 times increase in Raman signal and a ∼30 times increase in the photoluminescence (PL) intensity of WSe2. On the basis of the interference model, we also propose a strategy to control the photonic and optoelectronic properties of thin-layer WSe2. This work demonstrates the utilization of outcoupling engineering in 2D materials and offers a new route toward the realization of novel optoelectronic devices, such as 2D LEDs and solar cells.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Nano Energy Lab
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
11-Feb-2015
DOI:
10.1021/nl504632u
Type:
Article
ISSN:
15306984
Appears in Collections:
Articles; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLien, Derhsienen
dc.contributor.authorKang, Jeongseuken
dc.contributor.authorAmani, Matinen
dc.contributor.authorChen, Kevinen
dc.contributor.authorTosun, Mahmuten
dc.contributor.authorWang, Hsinpingen
dc.contributor.authorRoy, Taniaen
dc.contributor.authorEggleston, Michael S.en
dc.contributor.authorWu, Ming C.en
dc.contributor.authorDubey, Madanen
dc.contributor.authorLee, Sichenen
dc.contributor.authorHe, Jr-Hauen
dc.contributor.authorJavey, Alien
dc.date.accessioned2015-08-03T12:30:02Zen
dc.date.available2015-08-03T12:30:02Zen
dc.date.issued2015-02-11en
dc.identifier.issn15306984en
dc.identifier.doi10.1021/nl504632uen
dc.identifier.urihttp://hdl.handle.net/10754/564054en
dc.description.abstractWhen light is incident on 2D transition metal dichalcogenides (TMDCs), it engages in multiple reflections within underlying substrates, producing interferences that lead to enhancement or attenuation of the incoming and outgoing strength of light. Here, we report a simple method to engineer the light outcoupling in semiconducting TMDCs by modulating their dielectric surroundings. We show that by modulating the thicknesses of underlying substrates and capping layers, the interference caused by substrate can significantly enhance the light absorption and emission of WSe2, resulting in a ∼11 times increase in Raman signal and a ∼30 times increase in the photoluminescence (PL) intensity of WSe2. On the basis of the interference model, we also propose a strategy to control the photonic and optoelectronic properties of thin-layer WSe2. This work demonstrates the utilization of outcoupling engineering in 2D materials and offers a new route toward the realization of novel optoelectronic devices, such as 2D LEDs and solar cells.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subject2D materialsen
dc.subjectlight outcouplingen
dc.subjectphotoluminescenceen
dc.subjectRamanen
dc.subjectsubstrate interferenceen
dc.titleEngineering light outcoupling in 2D materialsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentNano Energy Laben
dc.identifier.journalNano Lettersen
dc.contributor.institutionElectrical Engineering and Computer Sciences, University of CaliforniaBerkeley, CA, United Statesen
dc.contributor.institutionMaterials Sciences Division, Lawrence Berkeley National LaboratoryBerkeley, CA, United Statesen
dc.contributor.institutionDepartment of Electrical Engineering, Institute of Electronics Engineering, National Taiwan UniversityTaipei, Taiwanen
dc.contributor.institutionSensors and Electron Devices Dir., U.S. Army Research LaboratoryAdelphi, MD, United Statesen
kaust.authorHe, Jr-Hauen
kaust.authorLien, Derhsienen
kaust.authorWang, Hsinpingen
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