Compensated readout for high-density MOS-gated memristor crossbar array

Handle URI:
http://hdl.handle.net/10754/563991
Title:
Compensated readout for high-density MOS-gated memristor crossbar array
Authors:
Zidan, Mohammed A. ( 0000-0003-3843-814X ) ; Omran, Hesham ( 0000-0002-0117-7364 ) ; Salem, Ahmed Sultan; Fahmy, Hossam Aly Hassan; Salama, Khaled N. ( 0000-0001-7742-1282 )
Abstract:
Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Sensors Lab
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Nanotechnology
Issue Date:
Jan-2015
DOI:
10.1109/TNANO.2014.2363352
Type:
Article
ISSN:
1536125X
Appears in Collections:
Articles; Electrical Engineering Program; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZidan, Mohammed A.en
dc.contributor.authorOmran, Heshamen
dc.contributor.authorSalem, Ahmed Sultanen
dc.contributor.authorFahmy, Hossam Aly Hassanen
dc.contributor.authorSalama, Khaled N.en
dc.date.accessioned2015-08-03T12:22:10Zen
dc.date.available2015-08-03T12:22:10Zen
dc.date.issued2015-01en
dc.identifier.issn1536125Xen
dc.identifier.doi10.1109/TNANO.2014.2363352en
dc.identifier.urihttp://hdl.handle.net/10754/563991en
dc.description.abstractLeakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectCrossbaren
dc.subjectLeakage Currenten
dc.subjectMemoryen
dc.subjectMemristoren
dc.titleCompensated readout for high-density MOS-gated memristor crossbar arrayen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentSensors Laben
dc.identifier.journalIEEE Transactions on Nanotechnologyen
dc.contributor.institutionElectronics and Communication Department, Faculty of Engineering, Cairo UniversityGiza, Egypten
kaust.authorZidan, Mohammed A.en
kaust.authorOmran, Heshamen
kaust.authorSalama, Khaled N.en
kaust.authorSalem, Ahmed Sultanen
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