Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

Handle URI:
http://hdl.handle.net/10754/563983
Title:
Harsh photovoltaics using InGaN/GaN multiple quantum well schemes
Authors:
Lien, Derhsien; Hsiao, Yuhsuan; Yang, Shihguo; Tsai, Menglin; Wei, Tzuchiao; Lee, Sichen; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Nano Energy Lab
Publisher:
Elsevier BV
Journal:
Nano Energy
Issue Date:
Jan-2015
DOI:
10.1016/j.nanoen.2014.10.013
Type:
Article
ISSN:
22112855
Appears in Collections:
Articles; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLien, Derhsienen
dc.contributor.authorHsiao, Yuhsuanen
dc.contributor.authorYang, Shihguoen
dc.contributor.authorTsai, Menglinen
dc.contributor.authorWei, Tzuchiaoen
dc.contributor.authorLee, Sichenen
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2015-08-03T12:21:49Zen
dc.date.available2015-08-03T12:21:49Zen
dc.date.issued2015-01en
dc.identifier.issn22112855en
dc.identifier.doi10.1016/j.nanoen.2014.10.013en
dc.identifier.urihttp://hdl.handle.net/10754/563983en
dc.description.abstractHarvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.en
dc.publisherElsevier BVen
dc.subjectGaNen
dc.subjectHarsh electronicsen
dc.subjectQuantum wellen
dc.subjectSolar cellen
dc.titleHarsh photovoltaics using InGaN/GaN multiple quantum well schemesen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentNano Energy Laben
dc.identifier.journalNano Energyen
dc.contributor.institutionInstitute of Electronics Engineering, National Taiwan UniversityTaipei, Taiwanen
dc.contributor.institutionInstitute of Photonics and Optoelectronics, National Taiwan UniversityTaipei, Taiwanen
kaust.authorHe, Jr-Hauen
kaust.authorLien, Derhsienen
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