Hybrid dual gate ferroelectric memory for multilevel information storage

Handle URI:
http://hdl.handle.net/10754/563981
Title:
Hybrid dual gate ferroelectric memory for multilevel information storage
Authors:
Khan, Yasser; Caraveo-Frescas, Jesus Alfonso; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
Here, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Functional Nanomaterials and Devices Research Group
Publisher:
Elsevier BV
Journal:
Organic Electronics
Issue Date:
Jan-2015
DOI:
10.1016/j.orgel.2014.10.034
Type:
Article
ISSN:
15661199
Sponsors:
Research reported in this publication has been supported by King Abdullah University of Science and Technology (KAUST) and by Saudi Basic Industries (SABIC) Grant No. 2000000015.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorKhan, Yasseren
dc.contributor.authorCaraveo-Frescas, Jesus Alfonsoen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-03T12:21:45Zen
dc.date.available2015-08-03T12:21:45Zen
dc.date.issued2015-01en
dc.identifier.issn15661199en
dc.identifier.doi10.1016/j.orgel.2014.10.034en
dc.identifier.urihttp://hdl.handle.net/10754/563981en
dc.description.abstractHere, we report hybrid organic/inorganic ferroelectric memory with multilevel information storage using transparent p-type SnO semiconductor and ferroelectric P(VDF-TrFE) polymer. The dual gate devices include a top ferroelectric field-effect transistor (FeFET) and a bottom thin-film transistor (TFT). The devices are all fabricated at low temperatures (∼200°C), and demonstrate excellent performance with high hole mobility of 2.7 cm2 V-1 s-1, large memory window of ∼18 V, and a low sub-threshold swing ∼-4 V dec-1. The channel conductance of the bottom-TFT and the top-FeFET can be controlled independently by the bottom and top gates, respectively. The results demonstrate multilevel nonvolatile information storage using ferroelectric memory devices with good retention characteristics.en
dc.description.sponsorshipResearch reported in this publication has been supported by King Abdullah University of Science and Technology (KAUST) and by Saudi Basic Industries (SABIC) Grant No. 2000000015.en
dc.publisherElsevier BVen
dc.subjectDual gateen
dc.subjectFerroelectricen
dc.subjectMemoryen
dc.subjectp-type semiconductoren
dc.subjectTin monoxideen
dc.titleHybrid dual gate ferroelectric memory for multilevel information storageen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalOrganic Electronicsen
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorAlshareef, Husam N.en
kaust.authorKhan, Yasseren
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