A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices

Handle URI:
http://hdl.handle.net/10754/563966
Title:
A two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devices
Authors:
Park, Jihoon ( 0000-0003-1204-9568 ) ; Kurra, Narendra ( 0000-0002-0916-7902 ) ; AlMadhoun, M. N.; Odeh, Ihab N.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
We report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films. The proposed two-step annealing scheme comprises the crystallization of the ferroelectric gamma-phase during the first step and enhancement of the PVDF film dense morphology during the second step. Moreover, when we extended the processing time of the second step, we obtained good hysteresis curves down to 1 Hz, the first such report for ferroelectric PVDF films. The PVDF films also exhibit a coercive field of 113 MV m-1 and a ferroelectric polarization of 5.4 μC cm-2. © The Royal Society of Chemistry 2015.
KAUST Department:
Materials Science and Engineering Program; SABIC - Corporate Research and Innovation Center (CRI) at KAUST; Physical Sciences and Engineering (PSE) Division; Functional Nanomaterials and Devices Research Group
Publisher:
Royal Society of Chemistry (RSC)
Journal:
J. Mater. Chem. C
Issue Date:
2015
DOI:
10.1039/c4tc02079k
Type:
Article
ISSN:
20507534
Sponsors:
Research reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also would like to acknowledge the Saudi Basic Industries Corporation (SABIC) Grant no. RGC/3/1094-01. N.K. acknowledges the support from SABIC Postdoctoral Fellowship.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorPark, Jihoonen
dc.contributor.authorKurra, Narendraen
dc.contributor.authorAlMadhoun, M. N.en
dc.contributor.authorOdeh, Ihab N.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-03T12:21:12Zen
dc.date.available2015-08-03T12:21:12Zen
dc.date.issued2015en
dc.identifier.issn20507534en
dc.identifier.doi10.1039/c4tc02079ken
dc.identifier.urihttp://hdl.handle.net/10754/563966en
dc.description.abstractWe report a simple two-step annealing scheme for the fabrication of stable non-volatile memory devices employing poly(vinylidene fluoride) (PVDF) polymer thin-films. The proposed two-step annealing scheme comprises the crystallization of the ferroelectric gamma-phase during the first step and enhancement of the PVDF film dense morphology during the second step. Moreover, when we extended the processing time of the second step, we obtained good hysteresis curves down to 1 Hz, the first such report for ferroelectric PVDF films. The PVDF films also exhibit a coercive field of 113 MV m-1 and a ferroelectric polarization of 5.4 μC cm-2. © The Royal Society of Chemistry 2015.en
dc.description.sponsorshipResearch reported in this publication was supported by the King Abdullah University of Science and Technology (KAUST). The authors also would like to acknowledge the Saudi Basic Industries Corporation (SABIC) Grant no. RGC/3/1094-01. N.K. acknowledges the support from SABIC Postdoctoral Fellowship.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.titleA two-step annealing process for enhancing the ferroelectric properties of poly(vinylidene fluoride) (PVDF) devicesen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentSABIC - Corporate Research and Innovation Center (CRI) at KAUSTen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalJ. Mater. Chem. Cen
kaust.authorPark, Jihoonen
kaust.authorKurra, Narendraen
kaust.authorAlshareef, Husam N.en
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