Nitrogen-Doped Graphene/Platinum Counter Electrodes for Dye-Sensitized Solar Cells

Handle URI:
http://hdl.handle.net/10754/563923
Title:
Nitrogen-Doped Graphene/Platinum Counter Electrodes for Dye-Sensitized Solar Cells
Authors:
Lin, Chinan; Lee, Chuanpei; Ho, Shute; Wei, Tzuchiao; Chi, Yuwen; Huang, Kunping; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
Nitrogen-doped graphene (NGR) was utilized in dye-sensitized solar cells for energy harvesting. NGR on a Pt-sputtered fluorine-doped tin oxide substrate (NGR/Pt/FTO) as counter electrodes (CEs) achieves the high efficiency of 9.38% via the nitrogen doping into graphene. This is due to (i) the hole-cascading transport at the interface of electrolyte/CEs via controlling the valence band maximum of NGR located between the redox potential of the I-/I- redox couple and the Fermi level of Pt by nitrogen doping, (ii) the extended electron transfer surface effect provided by large-surface-area NGR, (iii) the high charge transfer efficiency due to superior catalytic characteristics of NGR via nitrogen doping, and (iv) the superior light-reflection effect of NGR/Pt/FTO CEs, facilitating the electron transfer from CEs to I3 - ions of the electrolyte and light absorption of dye. The result demonstrated that the NGR/Pt hybrid structure is promising in the catalysis field. (Chemical Presented). © 2014 American Chemical Society.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Nano Energy Lab
Publisher:
American Chemical Society (ACS)
Journal:
ACS Photonics
Issue Date:
17-Dec-2014
DOI:
10.1021/ph500219r
Type:
Article
ISSN:
23304022
Appears in Collections:
Articles; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLin, Chinanen
dc.contributor.authorLee, Chuanpeien
dc.contributor.authorHo, Shuteen
dc.contributor.authorWei, Tzuchiaoen
dc.contributor.authorChi, Yuwenen
dc.contributor.authorHuang, Kunpingen
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2015-08-03T12:19:40Zen
dc.date.available2015-08-03T12:19:40Zen
dc.date.issued2014-12-17en
dc.identifier.issn23304022en
dc.identifier.doi10.1021/ph500219ren
dc.identifier.urihttp://hdl.handle.net/10754/563923en
dc.description.abstractNitrogen-doped graphene (NGR) was utilized in dye-sensitized solar cells for energy harvesting. NGR on a Pt-sputtered fluorine-doped tin oxide substrate (NGR/Pt/FTO) as counter electrodes (CEs) achieves the high efficiency of 9.38% via the nitrogen doping into graphene. This is due to (i) the hole-cascading transport at the interface of electrolyte/CEs via controlling the valence band maximum of NGR located between the redox potential of the I-/I- redox couple and the Fermi level of Pt by nitrogen doping, (ii) the extended electron transfer surface effect provided by large-surface-area NGR, (iii) the high charge transfer efficiency due to superior catalytic characteristics of NGR via nitrogen doping, and (iv) the superior light-reflection effect of NGR/Pt/FTO CEs, facilitating the electron transfer from CEs to I3 - ions of the electrolyte and light absorption of dye. The result demonstrated that the NGR/Pt hybrid structure is promising in the catalysis field. (Chemical Presented). © 2014 American Chemical Society.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectcounter electrodeen
dc.subjectdye-sensitized solar cellsen
dc.subjectnitrogen-doped grapheneen
dc.subjectplatinumen
dc.titleNitrogen-Doped Graphene/Platinum Counter Electrodes for Dye-Sensitized Solar Cellsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentNano Energy Laben
dc.identifier.journalACS Photonicsen
dc.contributor.institutionInstitute of Photonics and Optoelectronics, Department of Electrical Engineering, National Taiwan UniversityTaipei, Taiwanen
dc.contributor.institutionMechanical and Systems Research Laboratories, Industrial Technology Research InstituteHsinchu, Taiwanen
kaust.authorHe, Jr-Hauen
kaust.authorLin, Chinanen
kaust.authorHo, Shuteen
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