Infrared waveguide fabrications with an E-beam evaporated chalcogenide glass film

Handle URI:
http://hdl.handle.net/10754/563920
Title:
Infrared waveguide fabrications with an E-beam evaporated chalcogenide glass film
Authors:
Yang, Xiaoming; Zhang, Yaping; Syed, Ahad A.
Abstract:
Chalcogenide glasses have a variety of unique optical properties due to the intrinsic structural flexibility and bonds metastability. They are desirable materials for many applications, such as infrared communication sensors, holographic grating, optical imaging, and ultrafast nonlinear optic devices. Here, we introduce a novel electron-beam evaporation process to deposit the good quality arsenic trisulfide (As2S3) films and then the As2S3 films were used to fabricate the As2S3 waveguides with three approaches. The first method is photoresist lift-off. Because of the restriction of thermal budget of photoresist, the As2S3 film must be deposited at the room temperature. The second one is the silicon dioxide lift-off process on sapphire substrates, in which the As2S3 film could be evaporated at a high temperature (>180 °C) for better film quality. The third one is the plasma etching process with a metal protective thin layer in the pattern development process.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Photonics Laboratory; Physical Sciences and Engineering (PSE) Division; Core Labs
Publisher:
Informa UK Limited
Journal:
Journal of Modern Optics
Issue Date:
12-Dec-2014
DOI:
10.1080/09500340.2014.992990
Type:
Article
ISSN:
09500340
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorYang, Xiaomingen
dc.contributor.authorZhang, Yapingen
dc.contributor.authorSyed, Ahad A.en
dc.date.accessioned2015-08-03T12:19:35Zen
dc.date.available2015-08-03T12:19:35Zen
dc.date.issued2014-12-12en
dc.identifier.issn09500340en
dc.identifier.doi10.1080/09500340.2014.992990en
dc.identifier.urihttp://hdl.handle.net/10754/563920en
dc.description.abstractChalcogenide glasses have a variety of unique optical properties due to the intrinsic structural flexibility and bonds metastability. They are desirable materials for many applications, such as infrared communication sensors, holographic grating, optical imaging, and ultrafast nonlinear optic devices. Here, we introduce a novel electron-beam evaporation process to deposit the good quality arsenic trisulfide (As2S3) films and then the As2S3 films were used to fabricate the As2S3 waveguides with three approaches. The first method is photoresist lift-off. Because of the restriction of thermal budget of photoresist, the As2S3 film must be deposited at the room temperature. The second one is the silicon dioxide lift-off process on sapphire substrates, in which the As2S3 film could be evaporated at a high temperature (>180 °C) for better film quality. The third one is the plasma etching process with a metal protective thin layer in the pattern development process.en
dc.publisherInforma UK Limiteden
dc.subjectAs2S3en
dc.subjectchalcogenide glassen
dc.subjectelectron-beam evaporationen
dc.subjectlift-offen
dc.subjectplasma etchingen
dc.subjectwaveguideen
dc.titleInfrared waveguide fabrications with an E-beam evaporated chalcogenide glass filmen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentCore Labsen
dc.identifier.journalJournal of Modern Opticsen
kaust.authorYang, Xiaomingen
kaust.authorZhang, Yapingen
kaust.authorSyed, Ahad A.en
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