Observing grain boundaries in CVD-grown monolayer transition metal dichalcogenides

Handle URI:
http://hdl.handle.net/10754/563872
Title:
Observing grain boundaries in CVD-grown monolayer transition metal dichalcogenides
Authors:
Ly, Thuchue; Chiu, Ming-Hui; Li, Mingyang; Zhao, Jiong; Perello, David J.; Cichocka, Magdalena Ola; Oh, Hyemin; Chae, Sanghoon; Jeong, Hyeyun; Yao, Fei; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Lee, Young Hee
Abstract:
Two-dimensional monolayer transition metal dichalcogenides (TMdCs), driven by graphene science, revisit optical and electronic properties, which are markedly different from bulk characteristics. These properties are easily modified due to accessibility of all the atoms viable to ambient gases, and therefore, there is no guarantee that impurities and defects such as vacancies, grain boundaries, and wrinkles behave as those of ideal bulk. On the other hand, this could be advantageous in engineering such defects. Here, we report a method of observing grain boundary distribution of monolayer TMdCs by a selective oxidation. This was implemented by exposing directly the TMdC layer grown on sapphire without transfer to ultraviolet light irradiation under moisture-rich conditions. The generated oxygen and hydroxyl radicals selectively functionalized defective grain boundaries in TMdCs to provoke morphological changes at the boundary, where the grain boundary distribution was observed by atomic force microscopy and scanning electron microscopy. This paves the way toward the investigation of transport properties engineered by defects and grain boundaries. (Figure Presented).
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
25-Nov-2014
DOI:
10.1021/nn504470q
Type:
Article
ISSN:
19360851
Sponsors:
This work was supported by Project Code (IBS-R011-D1).
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorLy, Thuchueen
dc.contributor.authorChiu, Ming-Huien
dc.contributor.authorLi, Mingyangen
dc.contributor.authorZhao, Jiongen
dc.contributor.authorPerello, David J.en
dc.contributor.authorCichocka, Magdalena Olaen
dc.contributor.authorOh, Hyeminen
dc.contributor.authorChae, Sanghoonen
dc.contributor.authorJeong, Hyeyunen
dc.contributor.authorYao, Feien
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorLee, Young Heeen
dc.date.accessioned2015-08-03T12:17:47Zen
dc.date.available2015-08-03T12:17:47Zen
dc.date.issued2014-11-25en
dc.identifier.issn19360851en
dc.identifier.doi10.1021/nn504470qen
dc.identifier.urihttp://hdl.handle.net/10754/563872en
dc.description.abstractTwo-dimensional monolayer transition metal dichalcogenides (TMdCs), driven by graphene science, revisit optical and electronic properties, which are markedly different from bulk characteristics. These properties are easily modified due to accessibility of all the atoms viable to ambient gases, and therefore, there is no guarantee that impurities and defects such as vacancies, grain boundaries, and wrinkles behave as those of ideal bulk. On the other hand, this could be advantageous in engineering such defects. Here, we report a method of observing grain boundary distribution of monolayer TMdCs by a selective oxidation. This was implemented by exposing directly the TMdC layer grown on sapphire without transfer to ultraviolet light irradiation under moisture-rich conditions. The generated oxygen and hydroxyl radicals selectively functionalized defective grain boundaries in TMdCs to provoke morphological changes at the boundary, where the grain boundary distribution was observed by atomic force microscopy and scanning electron microscopy. This paves the way toward the investigation of transport properties engineered by defects and grain boundaries. (Figure Presented).en
dc.description.sponsorshipThis work was supported by Project Code (IBS-R011-D1).en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectAtomic force microscopyen
dc.subjectSapphire grain boundaryen
dc.subjectScanning electron microscopyen
dc.subjectSelective oxidationen
dc.subjectSTEMen
dc.subjectTEMen
dc.subjectTransition metal dichalcogenidesen
dc.titleObserving grain boundaries in CVD-grown monolayer transition metal dichalcogenidesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalACS Nanoen
dc.contributor.institutionIBS Center for Integrated Nanostructure Physics, Institute for Basic Science, Sungkyunkwan UniversitySuwon, South Koreaen
dc.contributor.institutionDepartment of Energy Science, Department of Physics, Sungkyunkwan UniversitySuwon, South Koreaen
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia SinicaTaipei, Taiwanen
kaust.authorLi, Lain-Jongen
kaust.authorChiu, Ming-Huien
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