Towards neuromorphic electronics: Memristors on foldable silicon fabric

Handle URI:
http://hdl.handle.net/10754/563834
Title:
Towards neuromorphic electronics: Memristors on foldable silicon fabric
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Zidan, Mohammed A. ( 0000-0003-3843-814X ) ; Salama, Khaled N. ( 0000-0001-7742-1282 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
The advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex's folded pattern for ultra-compact design.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Elsevier BV
Journal:
Microelectronics Journal
Issue Date:
Nov-2014
DOI:
10.1016/j.mejo.2014.07.011
Type:
Article
ISSN:
00262692
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Sensors Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorZidan, Mohammed A.en
dc.contributor.authorSalama, Khaled N.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T12:16:09Zen
dc.date.available2015-08-03T12:16:09Zen
dc.date.issued2014-11en
dc.identifier.issn00262692en
dc.identifier.doi10.1016/j.mejo.2014.07.011en
dc.identifier.urihttp://hdl.handle.net/10754/563834en
dc.description.abstractThe advantages associated with neuromorphic computation are rich areas of complex research. We address the fabrication challenge of building neuromorphic devices on structurally foldable platform with high integration density. We present a CMOS compatible fabrication process to demonstrate for the first time memristive devices fabricated on bulk monocrystalline silicon (100) which is next transformed into a flexible thin sheet of silicon fabric with all the pre-fabricated devices. This process preserves the ultra-high integration density advantage unachievable on other flexible substrates. In addition, the memristive devices are of the size of a motor neuron and the flexible/folded architectural form factor is critical to match brain cortex's folded pattern for ultra-compact design.en
dc.publisherElsevier BVen
dc.subjectFoldable electronicsen
dc.subjectIntegration densityen
dc.subjectMemristive devicesen
dc.subjectNeuromorphic computingen
dc.titleTowards neuromorphic electronics: Memristors on foldable silicon fabricen
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentSensors Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalMicroelectronics Journalen
kaust.authorGhoneim, Mohamed T.en
kaust.authorZidan, Mohammed A.en
kaust.authorSalama, Khaled N.en
kaust.authorHussain, Muhammad Mustafaen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.