Flexible nanoscale high-performance FinFETs

Handle URI:
http://hdl.handle.net/10754/563807
Title:
Flexible nanoscale high-performance FinFETs
Authors:
Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Fahad, Hossain M.; Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
With the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics.
KAUST Department:
Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
28-Oct-2014
DOI:
10.1021/nn5041608
Type:
Article
ISSN:
19360851
Sponsors:
We acknowledge the support from MUST OCRF Competitive Research Grant: CRG-1-2012-HUS-008 for this work.
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T12:10:48Zen
dc.date.available2015-08-03T12:10:48Zen
dc.date.issued2014-10-28en
dc.identifier.issn19360851en
dc.identifier.doi10.1021/nn5041608en
dc.identifier.urihttp://hdl.handle.net/10754/563807en
dc.description.abstractWith the emergence of the Internet of Things (IoT), flexible high-performance nanoscale electronics are more desired. At the moment, FinFET is the most advanced transistor architecture used in the state-of-the-art microprocessors. Therefore, we show a soft-etch based substrate thinning process to transform silicon-on-insulator (SOI) based nanoscale FinFET into flexible FinFET and then conduct comprehensive electrical characterization under various bending conditions to understand its electrical performance. Our study shows that back-etch based substrate thinning process is gentler than traditional abrasive back-grinding process; it can attain ultraflexibility and the electrical characteristics of the flexible nanoscale FinFET show no performance degradation compared to its rigid bulk counterpart indicating its readiness to be used for flexible high-performance electronics.en
dc.description.sponsorshipWe acknowledge the support from MUST OCRF Competitive Research Grant: CRG-1-2012-HUS-008 for this work.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectFinFETsen
dc.subjectflexible siliconen
dc.subjecthigh-performance flexible electronicsen
dc.titleFlexible nanoscale high-performance FinFETsen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalACS Nanoen
kaust.authorSevilla, Galo T.en
kaust.authorGhoneim, Mohamed T.en
kaust.authorFahad, Hossain M.en
kaust.authorRojas, Jhonathan Prietoen
kaust.authorHussain, Aftab M.en
kaust.authorHussain, Muhammad Mustafaen
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