Area and energy efficient high-performance ZnO wavy channel thin-film transistor

Handle URI:
http://hdl.handle.net/10754/563739
Title:
Area and energy efficient high-performance ZnO wavy channel thin-film transistor
Authors:
Hanna, Amir ( 0000-0003-4679-366X ) ; Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Bahabry, Rabab R. ( 0000-0001-7866-6660 ) ; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Fahad, Hossain M.; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Increased output current while maintaining low power consumption in thin-film transistors (TFTs) is essential for future generation large-area high-resolution displays. Here, we show wavy channel (WC) architecture in TFT that allows the expansion of the transistor width in the direction perpendicular to the substrate through integrating continuous fin features on the underlying substrate. This architecture enables expanding the TFT width without consuming any additional chip area, thus enabling increased performance while maintaining the real estate integrity. The experimental WCTFTs show a linear increase in output current as a function of number of fins per device resulting in (3.5×) increase in output current when compared with planar counterparts that consume the same chip area. The new architecture also allows tuning the threshold voltage as a function of the number of fin features included in the device, as threshold voltage linearly decreased from 6.8 V for planar device to 2.6 V for WC devices with 32 fins. This makes the new architecture more power efficient as lower operation voltages could be used for WC devices compared with planar counterparts. It was also found that field effect mobility linearly increases with the number of fins included in the device, showing almost \(1.8×) enhancements in the field effect mobility than that of the planar counterparts. This can be attributed to higher electric field in the channel due to the fin architecture and threshold voltage shift. © 2014 IEEE.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Materials Science and Engineering Program
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Electron Devices
Issue Date:
Sep-2014
DOI:
10.1109/TED.2014.2336863
Type:
Article
ISSN:
00189383
Sponsors:
This work was supported by the King Abdullah University of Science and Technology, Thuwal, Saudi Arabia, through the Office of Competitive Research Funds under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor H.-S. Tae.
Appears in Collections:
Articles; Electrical Engineering Program; Materials Science and Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHanna, Amiren
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorBahabry, Rabab R.en
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T12:08:27Zen
dc.date.available2015-08-03T12:08:27Zen
dc.date.issued2014-09en
dc.identifier.issn00189383en
dc.identifier.doi10.1109/TED.2014.2336863en
dc.identifier.urihttp://hdl.handle.net/10754/563739en
dc.description.abstractIncreased output current while maintaining low power consumption in thin-film transistors (TFTs) is essential for future generation large-area high-resolution displays. Here, we show wavy channel (WC) architecture in TFT that allows the expansion of the transistor width in the direction perpendicular to the substrate through integrating continuous fin features on the underlying substrate. This architecture enables expanding the TFT width without consuming any additional chip area, thus enabling increased performance while maintaining the real estate integrity. The experimental WCTFTs show a linear increase in output current as a function of number of fins per device resulting in (3.5×) increase in output current when compared with planar counterparts that consume the same chip area. The new architecture also allows tuning the threshold voltage as a function of the number of fin features included in the device, as threshold voltage linearly decreased from 6.8 V for planar device to 2.6 V for WC devices with 32 fins. This makes the new architecture more power efficient as lower operation voltages could be used for WC devices compared with planar counterparts. It was also found that field effect mobility linearly increases with the number of fins included in the device, showing almost \(1.8×) enhancements in the field effect mobility than that of the planar counterparts. This can be attributed to higher electric field in the channel due to the fin architecture and threshold voltage shift. © 2014 IEEE.en
dc.description.sponsorshipThis work was supported by the King Abdullah University of Science and Technology, Thuwal, Saudi Arabia, through the Office of Competitive Research Funds under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor H.-S. Tae.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectArea efficiencyen
dc.subjectdevice widthen
dc.subjectperformanceen
dc.subjectthin film transistors (TFTs)en
dc.subjectthreshold voltageen
dc.subjectwavyen
dc.titleArea and energy efficient high-performance ZnO wavy channel thin-film transistoren
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalIEEE Transactions on Electron Devicesen
kaust.authorHanna, Amiren
kaust.authorGhoneim, Mohamed T.en
kaust.authorHussain, Aftab M.en
kaust.authorFahad, Hossain M.en
kaust.authorHussain, Muhammad Mustafaen
kaust.authorBahabry, Rabab R.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.