All-printed paper memory

Handle URI:
http://hdl.handle.net/10754/563714
Title:
All-printed paper memory
Authors:
Lien, Derhsien; Kao, Zhenkai; Huang, Tenghan; Liao, Yingchih; Lee, Sichen; He, Jr-Hau ( 0000-0003-1886-9241 )
Abstract:
We report the memory device on paper by means of an all-printing approach. Using a sequence of inkjet and screen-printing techniques, a simple metal-insulator-metal device structure is fabricated on paper as a resistive random access memory with a potential to reach gigabyte capacities on an A4 paper. The printed-paper-based memory devices (PPMDs) exhibit reproducible switching endurance, reliable retention, tunable memory window, and the capability to operate under extreme bending conditions. In addition, the PBMD can be labeled on electronics or living objects for multifunctional, wearable, on-skin, and biocompatible applications. The disposability and the high-security data storage of the paper-based memory are also demonstrated to show the ease of data handling, which are not achievable for regular silicon-based electronic devices. We envision that the PPMDs manufactured by this cost-effective and time-efficient all-printing approach would be a key electronic component to fully activate a paper-based circuit and can be directly implemented in medical biosensors, multifunctional devices, and self-powered systems. © 2014 American Chemical Society.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Nano Energy Lab
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
26-Aug-2014
DOI:
10.1021/nn501231z
Type:
Article
ISSN:
19360851
Sponsors:
We thank W.W.C., P.K.Y., S.H.D., and H.C.F. for technical support and helpful discussions. This work was supported by the National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112-M-002-024-MY3, 99-2120-M-007-011, and 101-2221-E-002-177-MY2).
Appears in Collections:
Articles; Electrical Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLien, Derhsienen
dc.contributor.authorKao, Zhenkaien
dc.contributor.authorHuang, Tenghanen
dc.contributor.authorLiao, Yingchihen
dc.contributor.authorLee, Sichenen
dc.contributor.authorHe, Jr-Hauen
dc.date.accessioned2015-08-03T12:07:29Zen
dc.date.available2015-08-03T12:07:29Zen
dc.date.issued2014-08-26en
dc.identifier.issn19360851en
dc.identifier.doi10.1021/nn501231zen
dc.identifier.urihttp://hdl.handle.net/10754/563714en
dc.description.abstractWe report the memory device on paper by means of an all-printing approach. Using a sequence of inkjet and screen-printing techniques, a simple metal-insulator-metal device structure is fabricated on paper as a resistive random access memory with a potential to reach gigabyte capacities on an A4 paper. The printed-paper-based memory devices (PPMDs) exhibit reproducible switching endurance, reliable retention, tunable memory window, and the capability to operate under extreme bending conditions. In addition, the PBMD can be labeled on electronics or living objects for multifunctional, wearable, on-skin, and biocompatible applications. The disposability and the high-security data storage of the paper-based memory are also demonstrated to show the ease of data handling, which are not achievable for regular silicon-based electronic devices. We envision that the PPMDs manufactured by this cost-effective and time-efficient all-printing approach would be a key electronic component to fully activate a paper-based circuit and can be directly implemented in medical biosensors, multifunctional devices, and self-powered systems. © 2014 American Chemical Society.en
dc.description.sponsorshipWe thank W.W.C., P.K.Y., S.H.D., and H.C.F. for technical support and helpful discussions. This work was supported by the National Science Council of Taiwan (99-2622-E-002-019-CC3, 99-2112-M-002-024-MY3, 99-2120-M-007-011, and 101-2221-E-002-177-MY2).en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectflexible electronicsen
dc.subjectinkjet printingen
dc.subjectpaper electronicsen
dc.subjectresistive random access memoryen
dc.titleAll-printed paper memoryen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentNano Energy Laben
dc.identifier.journalACS Nanoen
dc.contributor.institutionInstitute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwanen
dc.contributor.institutionInstitute of Electronics Engineering, National Taiwan University, Taipei 10617, Taiwanen
dc.contributor.institutionDepartment of Chemical Engineering, National Taiwan University, Taipei 10617, Taiwanen
dc.contributor.institutionDepartment of Electrical Engineering, National Taiwan University, Taipei 10617, Taiwanen
kaust.authorHe, Jr-Hauen
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