Epitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations

Handle URI:
http://hdl.handle.net/10754/563703
Title:
Epitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientations
Authors:
Shen, Youde; Turner, Stuart G.; Yang, Ping; Van Tendeloo, Gustaaf; Lebedev, Oleg I.; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
Controlling the morphology of nanowires in bottom-up synthesis and assembling them on planar substrates is of tremendous importance for device applications in electronics, photonics, sensing and energy conversion. To date, however, there remain challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia (YSZ) substrates via the epitaxy-assisted vapor-liquid-solid (VLS) mechanism, by simply regulating the growth conditions, in particular the growth temperature. This robust control on nanowire orientation is facilitated by the small lattice mismatch of 1.6% between ITO and YSZ. Further control of the orientation, symmetry and shape of the nanowires can be achieved by using YSZ substrates with (110) and (111), in addition to (100) surfaces. Based on these insights, we succeed in growing regular arrays of planar ITO nanowires from patterned catalyst nanoparticles. Overall, our discovery of unprecedented orientation control in ITO nanowires advances the general VLS synthesis, providing a robust epitaxy-based approach toward rational synthesis of nanowires. © 2014 American Chemical Society.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Laboratory of Nano Oxides for Sustainable Energy
Publisher:
American Chemical Society (ACS)
Journal:
Nano Letters
Issue Date:
13-Aug-2014
DOI:
10.1021/nl501163n
Type:
Article
ISSN:
15306984
Sponsors:
This work was supported in part by Singapore National Research Foundation, King Abdullah University of Science and Technology (KAUST), and European Union Seventh Framework Programme under Grant 312483 - ESTEEM2 (Integrated Infrastructure Initiative-I3). S.T. acknowledges the fund for scientific research Flanders (FWO) under the form of postdoctoral fellowship and for projects G004613N and G004413N. P.Y. is supported by SSLS via the NUS Core Support C-380-003-003-001.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Youdeen
dc.contributor.authorTurner, Stuart G.en
dc.contributor.authorYang, Pingen
dc.contributor.authorVan Tendeloo, Gustaafen
dc.contributor.authorLebedev, Oleg I.en
dc.contributor.authorWu, Taoen
dc.date.accessioned2015-08-03T12:07:02Zen
dc.date.available2015-08-03T12:07:02Zen
dc.date.issued2014-08-13en
dc.identifier.issn15306984en
dc.identifier.doi10.1021/nl501163nen
dc.identifier.urihttp://hdl.handle.net/10754/563703en
dc.description.abstractControlling the morphology of nanowires in bottom-up synthesis and assembling them on planar substrates is of tremendous importance for device applications in electronics, photonics, sensing and energy conversion. To date, however, there remain challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia (YSZ) substrates via the epitaxy-assisted vapor-liquid-solid (VLS) mechanism, by simply regulating the growth conditions, in particular the growth temperature. This robust control on nanowire orientation is facilitated by the small lattice mismatch of 1.6% between ITO and YSZ. Further control of the orientation, symmetry and shape of the nanowires can be achieved by using YSZ substrates with (110) and (111), in addition to (100) surfaces. Based on these insights, we succeed in growing regular arrays of planar ITO nanowires from patterned catalyst nanoparticles. Overall, our discovery of unprecedented orientation control in ITO nanowires advances the general VLS synthesis, providing a robust epitaxy-based approach toward rational synthesis of nanowires. © 2014 American Chemical Society.en
dc.description.sponsorshipThis work was supported in part by Singapore National Research Foundation, King Abdullah University of Science and Technology (KAUST), and European Union Seventh Framework Programme under Grant 312483 - ESTEEM2 (Integrated Infrastructure Initiative-I3). S.T. acknowledges the fund for scientific research Flanders (FWO) under the form of postdoctoral fellowship and for projects G004613N and G004413N. P.Y. is supported by SSLS via the NUS Core Support C-380-003-003-001.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectepitaxyen
dc.subjectindium tin oxideen
dc.subjectNanowireen
dc.subjectorientation controlen
dc.subjectvapor-liquid-solid mechanismen
dc.titleEpitaxy-enabled vapor-liquid-solid growth of tin-doped indium oxide nanowires with controlled orientationsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energyen
dc.identifier.journalNano Lettersen
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore, Singaporeen
dc.contributor.institutionEMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerpen, Belgiumen
dc.contributor.institutionSingapore Synchrotron Light Source (SSLS), National University of Singapore, 5 Research Link, 117603, Singapore, Singaporeen
dc.contributor.institutionLaboratoire CRISMAT, ENSICAEN, CNRS UMR 6508, 6 Boulevard du Maréchal Juin, 14050 Caen, Franceen
kaust.authorWu, Taoen
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