Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer

Handle URI:
http://hdl.handle.net/10754/563694
Title:
Fabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layer
Authors:
Fuentes-Fernandez, E. M A; Salomon-Preciado, A. M.; Gnade, Bruce E.; Quevedo-López, Manuel Angel Quevedo; Shah, Pradeep; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
The effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Functional Nanomaterials and Devices Research Group
Publisher:
Springer Nature
Journal:
Journal of Electronic Materials
Issue Date:
7-Aug-2014
DOI:
10.1007/s11664-014-3308-x
Type:
Article
ISSN:
03615235
Sponsors:
The authors would like to thank the National Science Foundation for the Phase I STTR #0810391 and Phase IB #0937831 grants supplemented by the Texas Emerging Technology Fund seed grant (March 2008-Sept 2009). The research reported here was also supported by King Abdullah University of Science and Technology.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorFuentes-Fernandez, E. M Aen
dc.contributor.authorSalomon-Preciado, A. M.en
dc.contributor.authorGnade, Bruce E.en
dc.contributor.authorQuevedo-López, Manuel Angel Quevedoen
dc.contributor.authorShah, Pradeepen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-03T12:06:41Zen
dc.date.available2015-08-03T12:06:41Zen
dc.date.issued2014-08-07en
dc.identifier.issn03615235en
dc.identifier.doi10.1007/s11664-014-3308-xen
dc.identifier.urihttp://hdl.handle.net/10754/563694en
dc.description.abstractThe effect of a polycrystalline silicon (poly-Si) seeding layer on the properties of relaxor Pb(Zr0.53,Ti0.47)O3-Pb(Zn1/3,Nb2/3)O3 (PZT-PZN) thin films and energy-harvesting cantilevers was studied. We deposited thin films of the relaxor on two substrates, with and without a poly-Si seeding layer. The seeding layer, which also served as a sacrificial layer to facilitate cantilever release, was found to improve morphology, phase purity, crystal orientation, and electrical properties. We attributed these results to reduction of the number of nucleation sites and, therefore, to an increase in relaxor film grain size. The areal power density of the wet-based released harvester was measured. The power density output of the energy harvester with this relaxor composition and the poly-Si seeding layer was 325 μW/cm2.en
dc.description.sponsorshipThe authors would like to thank the National Science Foundation for the Phase I STTR #0810391 and Phase IB #0937831 grants supplemented by the Texas Emerging Technology Fund seed grant (March 2008-Sept 2009). The research reported here was also supported by King Abdullah University of Science and Technology.en
dc.publisherSpringer Natureen
dc.subjectcantileveren
dc.subjectEnergy harvestingen
dc.subjectintegrationen
dc.subjectperovskiteen
dc.subjectpiezoelectricen
dc.subjectrelaxoren
dc.titleFabrication of relaxer-based piezoelectric energy harvesters using a sacrificial poly-Si seeding layeren
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalJournal of Electronic Materialsen
dc.contributor.institutionUniversity of Texas at Dallas, 800 W. Campbell RdRichardson, TX, United Statesen
dc.contributor.institutionTexas Micro Power Inc., 7920 Beltline RdDallas, TX, United Statesen
kaust.authorAlshareef, Husam N.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.