Low-cost high-quality crystalline germanium based flexible devices

Handle URI:
http://hdl.handle.net/10754/563599
Title:
Low-cost high-quality crystalline germanium based flexible devices
Authors:
Nassar, Joanna M. ( 0000-0003-4463-8877 ) ; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
High performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.
KAUST Department:
Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Publisher:
Wiley-Blackwell
Journal:
physica status solidi (RRL) - Rapid Research Letters
Issue Date:
16-Jun-2014
DOI:
10.1002/pssr.201409257
Type:
Article
ISSN:
18626254
Sponsors:
We thank KAUST OCRF Competitive Research Grant (CRG) 1 CRG-1-2012-HUS-008 for supporting this research.
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorNassar, Joanna M.en
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T11:55:22Zen
dc.date.available2015-08-03T11:55:22Zen
dc.date.issued2014-06-16en
dc.identifier.issn18626254en
dc.identifier.doi10.1002/pssr.201409257en
dc.identifier.urihttp://hdl.handle.net/10754/563599en
dc.description.abstractHigh performance flexible electronics promise innovative future technology for various interactive applications for the pursuit of low-cost, light-weight, and multi-functional devices. Thus, here we show a complementary metal oxide semiconductor (CMOS) compatible fabrication of flexible metal-oxide-semiconductor capacitors (MOSCAPs) with high-κ/metal gate stack, using a physical vapor deposition (PVD) cost-effective technique to obtain a high-quality Ge channel. We report outstanding bending radius ~1.25 mm and semi-transparency of 30%.en
dc.description.sponsorshipWe thank KAUST OCRF Competitive Research Grant (CRG) 1 CRG-1-2012-HUS-008 for supporting this research.en
dc.publisherWiley-Blackwellen
dc.subjectCMOSen
dc.subjectFlexible electronicsen
dc.subjectGermaniumen
dc.subjectThin filmsen
dc.titleLow-cost high-quality crystalline germanium based flexible devicesen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalphysica status solidi (RRL) - Rapid Research Lettersen
kaust.authorNassar, Joanna M.en
kaust.authorHussain, Aftab M.en
kaust.authorRojas, Jhonathan Prietoen
kaust.authorHussain, Muhammad Mustafaen
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