Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments

Handle URI:
http://hdl.handle.net/10754/563584
Title:
Improved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatments
Authors:
Salas Villaseñor, Ana L.; Mejia, Israel I.; Sotelo-Lerma, Mérida; Guo, Zaibing; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Quevedo-López, Manuel Angel Quevedo
Abstract:
Thin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Core Labs; Functional Nanomaterials and Devices Research Group
Publisher:
IOP Publishing
Journal:
Semiconductor Science and Technology
Issue Date:
1-Jun-2014
DOI:
10.1088/0268-1242/29/8/085001
Type:
Article
ISSN:
02681242
Sponsors:
Authors would like to thank CONACyT project 158281, The AFOSR project FA9550-10-1-0183, and COSMOS for partially supporting this work.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorSalas Villaseñor, Ana L.en
dc.contributor.authorMejia, Israel I.en
dc.contributor.authorSotelo-Lerma, Méridaen
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorQuevedo-López, Manuel Angel Quevedoen
dc.date.accessioned2015-08-03T11:55:02Zen
dc.date.available2015-08-03T11:55:02Zen
dc.date.issued2014-06-01en
dc.identifier.issn02681242en
dc.identifier.doi10.1088/0268-1242/29/8/085001en
dc.identifier.urihttp://hdl.handle.net/10754/563584en
dc.description.abstractThin film transistors (TFTs) with a bottom-gate configuration were fabricated using a photolithography process with chemically bath deposited (CBD) cadmium sulfide (CdS) films as the active channel. Thermal annealing in hydrogen was used to improve electrical stability and performance of the resulting CdS TFTs. Hydrogen thermal treatments results in significant V T instability (V T shift) improvement while increasing the I on/I off ratio without degrading carrier mobility. It is demonstrated that after annealing V T shift and I on/I off improves from 10 V to 4.6 V and from 105 to 10 9, respectively. Carrier mobility remains in the order of 14.5 cm2 V s-1. The reduced V T shift and performance is attributed to a reduction in oxygen species in the CdS after hydrogen annealing, as evaluated by Fourier transform infrared spectroscopy (FTIR). © 2014 IOP Publishing Ltd.en
dc.description.sponsorshipAuthors would like to thank CONACyT project 158281, The AFOSR project FA9550-10-1-0183, and COSMOS for partially supporting this work.en
dc.publisherIOP Publishingen
dc.subjectelectrical stabilityen
dc.subjectsolution-baseden
dc.subjectthin film transistorsen
dc.titleImproved electrical stability of CdS thin film transistors through Hydrogen-based thermal treatmentsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentCore Labsen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalSemiconductor Science and Technologyen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, United Statesen
dc.contributor.institutionDepartment of Polymer and Materials Science, University of Sonora, Hermosillo, Mexicoen
kaust.authorGuo, Zaibingen
kaust.authorAlshareef, Husam N.en
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