Rational design of organic semiconductors for texture control and self-patterning on halogenated surfaces

Handle URI:
http://hdl.handle.net/10754/563551
Title:
Rational design of organic semiconductors for texture control and self-patterning on halogenated surfaces
Authors:
Ward, Jeremy W.; Li, Ruipeng; Obaid, Abdulmalik; Payne, Marcia M.; Smilgies, Detlef Matthias; Anthony, John Edward; Amassian, Aram ( 0000-0002-5734-1194 ) ; Jurchescu, Oana D.
Abstract:
Understanding the interactions at interfaces between the materials constituting consecutive layers within organic thin-film transistors (OTFTs) is vital for optimizing charge injection and transport, tuning thin-film microstructure, and designing new materials. Here, the influence of the interactions at the interface between a halogenated organic semiconductor (OSC) thin film and a halogenated self-assembled monolayer on the formation of the crystalline texture directly affecting the performance of OTFTs is explored. By correlating the results from microbeam grazing incidence wide angle X-ray scattering (μGIWAXS) measurements of structure and texture with OTFT characteristics, two or more interaction paths between the terminating atoms of the semiconductor and the halogenated surface are found to be vital to templating a highly ordered morphology in the first layer. These interactions are effective when the separating distance is lower than 2.5 dw, where dw represents the van der Waals distance. The ability to modulate charge carrier transport by several orders of magnitude by promoting "edge-on" versus "face-on" molecular orientation and crystallographic textures in OSCs is demonstrated. It is found that the "edge-on" self-assembly of molecules forms uniform, (001) lamellar-textured crystallites which promote high charge carrier mobility, and that charge transport suffers as the fraction of the "face-on" oriented crystallites increases. The role of interfacial halogenation in mediating texture formation and the self-patterning of organic semiconductor films, as well as the resulting effects on charge transport in organic thin-film transistors, are explored. The presence of two or more anchoring sites between a halogenated semiconductor and a halogenated self-assembled monolayer, closer than about twice the corresponding van der Waals distance, alter the microstructure and improve electrical properties. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Materials Science and Engineering Program; Organic Electronics and Photovoltaics Group
Publisher:
Wiley
Journal:
Advanced Functional Materials
Issue Date:
15-May-2014
DOI:
10.1002/adfm.201400219; 10.1002/adfm.201470216
Type:
Article
ISSN:
1616301X
Sponsors:
The work at WFU was supported by the NSF grant ECCS-1102275. JWW gratefully acknowledges financial support from the NSF Graduate Student Fellowship (Grant No. DGE-0907738). Work at UKY was supported by the NSF grant CMMI-1255494. Part of this work was performed at the Cornell High Energy Synchrotron Source supported by the National Science Foundation and NIH-NIGMS via NSF award DMR-0936384.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorWard, Jeremy W.en
dc.contributor.authorLi, Ruipengen
dc.contributor.authorObaid, Abdulmaliken
dc.contributor.authorPayne, Marcia M.en
dc.contributor.authorSmilgies, Detlef Matthiasen
dc.contributor.authorAnthony, John Edwarden
dc.contributor.authorAmassian, Aramen
dc.contributor.authorJurchescu, Oana D.en
dc.date.accessioned2015-08-03T11:54:16Zen
dc.date.available2015-08-03T11:54:16Zen
dc.date.issued2014-05-15en
dc.identifier.issn1616301Xen
dc.identifier.doi10.1002/adfm.201400219en
dc.identifier.doi10.1002/adfm.201470216en
dc.identifier.urihttp://hdl.handle.net/10754/563551en
dc.description.abstractUnderstanding the interactions at interfaces between the materials constituting consecutive layers within organic thin-film transistors (OTFTs) is vital for optimizing charge injection and transport, tuning thin-film microstructure, and designing new materials. Here, the influence of the interactions at the interface between a halogenated organic semiconductor (OSC) thin film and a halogenated self-assembled monolayer on the formation of the crystalline texture directly affecting the performance of OTFTs is explored. By correlating the results from microbeam grazing incidence wide angle X-ray scattering (μGIWAXS) measurements of structure and texture with OTFT characteristics, two or more interaction paths between the terminating atoms of the semiconductor and the halogenated surface are found to be vital to templating a highly ordered morphology in the first layer. These interactions are effective when the separating distance is lower than 2.5 dw, where dw represents the van der Waals distance. The ability to modulate charge carrier transport by several orders of magnitude by promoting "edge-on" versus "face-on" molecular orientation and crystallographic textures in OSCs is demonstrated. It is found that the "edge-on" self-assembly of molecules forms uniform, (001) lamellar-textured crystallites which promote high charge carrier mobility, and that charge transport suffers as the fraction of the "face-on" oriented crystallites increases. The role of interfacial halogenation in mediating texture formation and the self-patterning of organic semiconductor films, as well as the resulting effects on charge transport in organic thin-film transistors, are explored. The presence of two or more anchoring sites between a halogenated semiconductor and a halogenated self-assembled monolayer, closer than about twice the corresponding van der Waals distance, alter the microstructure and improve electrical properties. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipThe work at WFU was supported by the NSF grant ECCS-1102275. JWW gratefully acknowledges financial support from the NSF Graduate Student Fellowship (Grant No. DGE-0907738). Work at UKY was supported by the NSF grant CMMI-1255494. Part of this work was performed at the Cornell High Energy Synchrotron Source supported by the National Science Foundation and NIH-NIGMS via NSF award DMR-0936384.en
dc.publisherWileyen
dc.subjecthalogen bondsen
dc.subjectmicrostructuresen
dc.subjectorganic semiconductorsen
dc.subjectorganic thin-film transistorsen
dc.subjectμGIWAXSen
dc.titleRational design of organic semiconductors for texture control and self-patterning on halogenated surfacesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentOrganic Electronics and Photovoltaics Groupen
dc.identifier.journalAdvanced Functional Materialsen
dc.contributor.institutionDepartment of Physics, Wake Forest University, Winston-Salem, NC 27109, United Statesen
dc.contributor.institutionDepartment of Chemistry, University of Kentucky, Lexington, KY 40506, United Statesen
dc.contributor.institutionCornell High Energy Synchrotron Source, Cornell University, Ithaca, NY 14850, United Statesen
kaust.authorLi, Ruipengen
kaust.authorAmassian, Aramen
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