Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature

Handle URI:
http://hdl.handle.net/10754/563550
Title:
Atmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperature
Authors:
Qaisi, Ramy M. ( 0000-0003-0968-5483 ) ; Smith, Casey; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Publisher:
Wiley-Blackwell
Journal:
physica status solidi (RRL) - Rapid Research Letters
Issue Date:
15-May-2014
DOI:
10.1002/pssr.201409100
Type:
Article
ISSN:
18626254
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorQaisi, Ramy M.en
dc.contributor.authorSmith, Caseyen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T11:54:15Zen
dc.date.available2015-08-03T11:54:15Zen
dc.date.issued2014-05-15en
dc.identifier.issn18626254en
dc.identifier.doi10.1002/pssr.201409100en
dc.identifier.urihttp://hdl.handle.net/10754/563550en
dc.description.abstractWe report the characteristics of atmospheric chemical vapor deposition grown bilayer graphene transistors fabricated on ultra-scaled (10 nm) high-κ dielectric aluminum oxide (Al2O3) at elevated temperatures. We observed that the drive current increased by >400% as temperature increased from room temperature to 250 °C. Low gate leakage was maintained for prolonged exposure at 100 °C but increased significantly at temperatures >200 °C. These results provide important insights for considering chemical vapor deposition graphene on aluminum oxide for high temperature applications where low power and high frequency operation are required. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.publisherWiley-Blackwellen
dc.subjectChemical vapor depositionen
dc.subjectGrapheneen
dc.subjectTransistorsen
dc.titleAtmospheric pressure chemical vapor deposition (APCVD) grown bi-layer graphene transistor characteristics at high temperatureen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalphysica status solidi (RRL) - Rapid Research Lettersen
kaust.authorQaisi, Ramy M.en
kaust.authorSmith, Caseyen
kaust.authorHussain, Muhammad Mustafaen
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