Influence of stacking morphology and edge nitrogen doping on the dielectric performance of graphene-polymer nanocomposites

Handle URI:
http://hdl.handle.net/10754/563546
Title:
Influence of stacking morphology and edge nitrogen doping on the dielectric performance of graphene-polymer nanocomposites
Authors:
Almadhoun, Mahmoud N.; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Odeh, Ihab N.; Xavier, Prince; Bhansali, Unnat Sampatraj; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
We demonstrate that functional groups obtained by varying the preparation route of reduced graphene oxide (rGO) highly influence filler morphology and the overall dielectric performance of rGO-relaxor ferroelectric polymer nanocomposite. Specifically, we show that nitrogen-doping by hydrazine along the edges of reduced graphene oxide embedded in poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) results in a dielectric permittivity above 10 000 while maintaining a dielectric loss below 2. This is one of the best-reported dielectric constant/dielectric loss performance values. In contrast, rGO produced by the hydrothermal reduction route shows a much lower enhancement, reaching a maximum dielectric permittivity of 900. Furthermore, functional derivatives present in rGO are found to strongly affect the quality of dispersion and the resultant percolation threshold at low loading levels. However, high leakage currents and lowered breakdown voltages offset the advantages of increased capacitance in these ultrahigh-k systems, resulting in no significant improvement in stored energy density. © 2014 American Chemical Society.
KAUST Department:
Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; SABIC - Corporate Research and Innovation Center (CRI) at KAUST; Core Labs; Functional Nanomaterials and Devices Research Group
Publisher:
American Chemical Society (ACS)
Journal:
Chemistry of Materials
Issue Date:
13-May-2014
DOI:
10.1021/cm5004565
Type:
Article
ISSN:
08974756
Sponsors:
H.N.A. acknowledges the financial support from the Saudi Basic Industries Corporation (SABIC) Grant No. 2000000015.
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorAlmadhoun, Mahmoud N.en
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorOdeh, Ihab N.en
dc.contributor.authorXavier, Princeen
dc.contributor.authorBhansali, Unnat Sampatrajen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-03T11:54:09Zen
dc.date.available2015-08-03T11:54:09Zen
dc.date.issued2014-05-13en
dc.identifier.issn08974756en
dc.identifier.doi10.1021/cm5004565en
dc.identifier.urihttp://hdl.handle.net/10754/563546en
dc.description.abstractWe demonstrate that functional groups obtained by varying the preparation route of reduced graphene oxide (rGO) highly influence filler morphology and the overall dielectric performance of rGO-relaxor ferroelectric polymer nanocomposite. Specifically, we show that nitrogen-doping by hydrazine along the edges of reduced graphene oxide embedded in poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) results in a dielectric permittivity above 10 000 while maintaining a dielectric loss below 2. This is one of the best-reported dielectric constant/dielectric loss performance values. In contrast, rGO produced by the hydrothermal reduction route shows a much lower enhancement, reaching a maximum dielectric permittivity of 900. Furthermore, functional derivatives present in rGO are found to strongly affect the quality of dispersion and the resultant percolation threshold at low loading levels. However, high leakage currents and lowered breakdown voltages offset the advantages of increased capacitance in these ultrahigh-k systems, resulting in no significant improvement in stored energy density. © 2014 American Chemical Society.en
dc.description.sponsorshipH.N.A. acknowledges the financial support from the Saudi Basic Industries Corporation (SABIC) Grant No. 2000000015.en
dc.publisherAmerican Chemical Society (ACS)en
dc.titleInfluence of stacking morphology and edge nitrogen doping on the dielectric performance of graphene-polymer nanocompositesen
dc.typeArticleen
dc.contributor.departmentImaging and Characterization Core Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentSABIC - Corporate Research and Innovation Center (CRI) at KAUSTen
dc.contributor.departmentCore Labsen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalChemistry of Materialsen
kaust.authorHedhili, Mohamed N.en
kaust.authorBhansali, Unnat Sampatrajen
kaust.authorAlshareef, Husam N.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.