Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example

Handle URI:
http://hdl.handle.net/10754/563459
Title:
Wavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an example
Authors:
Zhou, Hang; Deng, Rui; Li, Yongfeng; Yao, Bin; Ding, Zhanhui; Wang, Qingxiao; Han, Yu ( 0000-0003-1462-1118 ) ; Wu, Tao ( 0000-0003-0845-4827 ) ; Liu, Lei
Abstract:
We report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Chemical Science Program; Advanced Membranes and Porous Materials Research Center; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC); Core Labs; Nanostructured Functional Materials (NFM) laboratory; Laboratory of Nano Oxides for Sustainable Energy
Publisher:
American Chemical Society (ACS)
Journal:
The Journal of Physical Chemistry C
Issue Date:
27-Mar-2014
DOI:
10.1021/jp411128m
Type:
Article
ISSN:
19327447
Sponsors:
This work was supported by the National Natural Science Foundation of China under Grant Nos. 61205038 and 11274135, Natural Science Foundation of Jilin province under Grant No. 201115013, and Ph.D. Programs Foundation of Ministry of Education of China under Grant No. 20120061120011. The work is supported by the Scientific and Technological Research Project of the "12th Five-Year Plan" of Jilin Provincial Education Department under Grant No. 2013189. This work was supported by High Performance Computing Center of Jilin University, China.
Appears in Collections:
Articles; Advanced Membranes and Porous Materials Research Center; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Chemical Science Program; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorZhou, Hangen
dc.contributor.authorDeng, Ruien
dc.contributor.authorLi, Yongfengen
dc.contributor.authorYao, Binen
dc.contributor.authorDing, Zhanhuien
dc.contributor.authorWang, Qingxiaoen
dc.contributor.authorHan, Yuen
dc.contributor.authorWu, Taoen
dc.contributor.authorLiu, Leien
dc.date.accessioned2015-08-03T11:52:02Zen
dc.date.available2015-08-03T11:52:02Zen
dc.date.issued2014-03-27en
dc.identifier.issn19327447en
dc.identifier.doi10.1021/jp411128men
dc.identifier.urihttp://hdl.handle.net/10754/563459en
dc.description.abstractWe report the observation of ultraviolet photoluminescence and electroluminescence in indium-doped SnO2 thin films with modified "forbidden" bandgap. With increasing indium concentration in SnO 2, dominant visible light emission evolves into the ultraviolet regime in photoluminescence. Hybrid functional first-principles calculations demonstrate that the complex of indium dopant and oxygen vacancy breaks "forbidden" band gap to form allowed transition states. Furthermore, undoped and 10% indium-doped SnO2 layers are synthesized on p-type GaN substrates to obtain SnO2-based heterojunction light-emitting diodes. A dominant visible emission band is observed in the undoped SnO 2-based heterojunction, whereas strong near-ultraviolet emission peak at 398 nm is observed in the indium-doped SnO2-based heterojunction. Our results demonstrate an unprecedented doping-based approach toward tailoring the symmetry of band edge states and recovering ultraviolet light emission in wide-bandgap oxides. © 2014 American Chemical Society.en
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China under Grant Nos. 61205038 and 11274135, Natural Science Foundation of Jilin province under Grant No. 201115013, and Ph.D. Programs Foundation of Ministry of Education of China under Grant No. 20120061120011. The work is supported by the Scientific and Technological Research Project of the "12th Five-Year Plan" of Jilin Provincial Education Department under Grant No. 2013189. This work was supported by High Performance Computing Center of Jilin University, China.en
dc.publisherAmerican Chemical Society (ACS)en
dc.titleWavelength-tuned light emission via modifying the band edge symmetry: Doped SnO2 as an exampleen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentChemical Science Programen
dc.contributor.departmentAdvanced Membranes and Porous Materials Research Centeren
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentCore Labsen
dc.contributor.departmentNanostructured Functional Materials (NFM) laboratoryen
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energyen
dc.identifier.journalThe Journal of Physical Chemistry Cen
dc.contributor.institutionSchool of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, Chinaen
dc.contributor.institutionKey Laboratory of Physics and Technology for Advanced Batteries, College of Physics, Jilin University, Changchun 130012, Chinaen
dc.contributor.institutionState Key Lab of Superhard Material, College of Physics, Jilin University, Changchun 130012, Chinaen
dc.contributor.institutionState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun 130033, Chinaen
kaust.authorWang, Qingxiaoen
kaust.authorHan, Yuen
kaust.authorWu, Taoen
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