Transformational silicon electronics

Handle URI:
http://hdl.handle.net/10754/563403
Title:
Transformational silicon electronics
Authors:
Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Inayat, Salman Bin; Ahmed, Sally; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
In today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry's most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.
KAUST Department:
Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
25-Feb-2014
DOI:
10.1021/nn405475k
Type:
Article
ISSN:
19360851
Sponsors:
We would like to thank the KAUST OCRF Competitive Research Grant CRG-1-2012-HUS-008 and the staff of the KAUST Advanced Nanofabrication Facilities for their technical support during the development of this project.
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorInayat, Salman Binen
dc.contributor.authorAhmed, Sallyen
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T11:47:42Zen
dc.date.available2015-08-03T11:47:42Zen
dc.date.issued2014-02-25en
dc.identifier.issn19360851en
dc.identifier.doi10.1021/nn405475ken
dc.identifier.urihttp://hdl.handle.net/10754/563403en
dc.description.abstractIn today's traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry's most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.en
dc.description.sponsorshipWe would like to thank the KAUST OCRF Competitive Research Grant CRG-1-2012-HUS-008 and the staff of the KAUST Advanced Nanofabrication Facilities for their technical support during the development of this project.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectμLIBen
dc.subjectflexible electronicsen
dc.subjectMIMCAPen
dc.subjectMOSCAPen
dc.subjectMOSFETen
dc.subjectsilicon (100)en
dc.titleTransformational silicon electronicsen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalACS Nanoen
kaust.authorRojas, Jhonathan Prietoen
kaust.authorSevilla, Galo T.en
kaust.authorGhoneim, Mohamed T.en
kaust.authorInayat, Salman Binen
kaust.authorAhmed, Sallyen
kaust.authorHussain, Aftab M.en
kaust.authorHussain, Muhammad Mustafaen
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