Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation

Handle URI:
http://hdl.handle.net/10754/563402
Title:
Flexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computation
Authors:
Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Fahad, Hossain M.; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Ghanem, Rawan; Smith, Casey; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
An industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Integrated Nanotechnology Lab; The KAUST Schools (TKS); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Publisher:
Wiley-VCH Verlag
Journal:
Advanced Materials
Issue Date:
22-Feb-2014
DOI:
10.1002/adma.201305309; 10.1002/adma.201470116
Type:
Article
ISSN:
09359648
Sponsors:
We would like to thank the Competitive Research Grant: CRG-1-2012-HUS-008 and the staff of the KAUST Advanced Nanofabrication Facilities for their technical support during the development of this project. We also thank Dr. Casey Smith for mask design. We are also grateful to Maria Peredo Silva for the rendition of Figure 2. Finally we thank Mrs. Kelly Rader for proof reading our revised manuscript.
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorGhanem, Rawanen
dc.contributor.authorSmith, Caseyen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T11:47:41Zen
dc.date.available2015-08-03T11:47:41Zen
dc.date.issued2014-02-22en
dc.identifier.issn09359648en
dc.identifier.doi10.1002/adma.201305309en
dc.identifier.doi10.1002/adma.201470116en
dc.identifier.urihttp://hdl.handle.net/10754/563402en
dc.description.abstractAn industry standard 8′′ silicon-on-insulator wafer based ultra-thin (1 μm), ultra-light-weight, fully flexible and remarkably transparent state-of-the-art non-planar three dimensional (3D) FinFET is shown. Introduced by Intel Corporation in 2011 as the most advanced transistor architecture, it reveals sub-20 nm features and the highest performance ever reported for a flexible transistor. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipWe would like to thank the Competitive Research Grant: CRG-1-2012-HUS-008 and the staff of the KAUST Advanced Nanofabrication Facilities for their technical support during the development of this project. We also thank Dr. Casey Smith for mask design. We are also grateful to Maria Peredo Silva for the rendition of Figure 2. Finally we thank Mrs. Kelly Rader for proof reading our revised manuscript.en
dc.publisherWiley-VCH Verlagen
dc.subjectbrain-architecture inspired computationen
dc.subjectFinFETen
dc.subjectflexibleen
dc.subjectsiliconen
dc.subjecttransparenten
dc.titleFlexible and transparent silicon-on-polymer based sub-20 nm non-planar 3D FinFET for brain-architecture inspired computationen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentThe KAUST Schools (TKS)en
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalAdvanced Materialsen
kaust.authorSevilla, Galo T.en
kaust.authorRojas, Jhonathan Prietoen
kaust.authorFahad, Hossain M.en
kaust.authorHussain, Aftab M.en
kaust.authorSmith, Caseyen
kaust.authorHussain, Muhammad Mustafaen
kaust.authorGhanem, Rawanen
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