Enhancement in anomalous Hall resistivity of Co/Pd multilayer and CoPd alloy by Ga+ ion irradiation

Handle URI:
http://hdl.handle.net/10754/563386
Title:
Enhancement in anomalous Hall resistivity of Co/Pd multilayer and CoPd alloy by Ga+ ion irradiation
Authors:
Guo, Zaibing; Mi, Wenbo; Li, Jingqi; Cheng, Yingchun; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
In this paper, we report the effect of Ga+ ion irradiation on anomalous Hall effect (AHE) and longitudinal resistivity (ρxx) in [Co(3 Å)/Pd(5 Å)]80 multilayer and Co 42Pd58 alloy. 4- and 2-fold increases in anomalous Hall resistivity (ρAH) in the Co/Pd multilayer and CoPd alloy have been observed after irradiations at doses of 2.4 × 1015 and 3.3×10 15 ions/cm2, respectively. Skew scattering and side jump contributions to AHE have been analyzed based on the scaling relationship ρAH = aρxx + bρ2xx. For the Co/Pd multilayer, AHE is mainly affected by ion irradiation-induced interface diffusion and defects. For the CoPd alloy, the increase in doses above 1.5 × 1015 ions/cm2 induces a sign change in skew scattering, followed by the skew scattering contribution to AHE overwhelming the side jump contribution, this phenomenon should be attributed to irradiation-induced defects and modifications in chemical ordering. © Copyright EPLA, 2014.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Core Labs
Publisher:
IOP Publishing
Journal:
EPL (Europhysics Letters)
Issue Date:
1-Feb-2014
DOI:
10.1209/0295-5075/105/46005
Type:
Article
ISSN:
02955075
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorMi, Wenboen
dc.contributor.authorLi, Jingqien
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-08-03T11:47:16Zen
dc.date.available2015-08-03T11:47:16Zen
dc.date.issued2014-02-01en
dc.identifier.issn02955075en
dc.identifier.doi10.1209/0295-5075/105/46005en
dc.identifier.urihttp://hdl.handle.net/10754/563386en
dc.description.abstractIn this paper, we report the effect of Ga+ ion irradiation on anomalous Hall effect (AHE) and longitudinal resistivity (ρxx) in [Co(3 Å)/Pd(5 Å)]80 multilayer and Co 42Pd58 alloy. 4- and 2-fold increases in anomalous Hall resistivity (ρAH) in the Co/Pd multilayer and CoPd alloy have been observed after irradiations at doses of 2.4 × 1015 and 3.3×10 15 ions/cm2, respectively. Skew scattering and side jump contributions to AHE have been analyzed based on the scaling relationship ρAH = aρxx + bρ2xx. For the Co/Pd multilayer, AHE is mainly affected by ion irradiation-induced interface diffusion and defects. For the CoPd alloy, the increase in doses above 1.5 × 1015 ions/cm2 induces a sign change in skew scattering, followed by the skew scattering contribution to AHE overwhelming the side jump contribution, this phenomenon should be attributed to irradiation-induced defects and modifications in chemical ordering. © Copyright EPLA, 2014.en
dc.publisherIOP Publishingen
dc.titleEnhancement in anomalous Hall resistivity of Co/Pd multilayer and CoPd alloy by Ga+ ion irradiationen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentCore Labsen
dc.identifier.journalEPL (Europhysics Letters)en
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, Chinaen
kaust.authorGuo, Zaibingen
kaust.authorLi, Jingqien
kaust.authorZhang, Xixiangen
kaust.authorCheng, Yingchunen
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