Tin - an unlikely ally for silicon field effect transistors?

Handle URI:
http://hdl.handle.net/10754/563338
Title:
Tin - an unlikely ally for silicon field effect transistors?
Authors:
Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Fahad, Hossain M.; Singh, Nirpendra ( 0000-0001-8043-0403 ) ; Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Computational Physics and Materials Science (CPMS); Integrated Nanotechnology Lab
Publisher:
Wiley-Blackwell
Journal:
physica status solidi (RRL) - Rapid Research Letters
Issue Date:
13-Jan-2014
DOI:
10.1002/pssr.201308300
Type:
Article
ISSN:
18626254
Sponsors:
This work was supported by the OCRF Competitive Research Grant (CRG-1-2012-HUS-008) and the Provost Award for Aftab M. Hussain.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Electrical Engineering Program; Materials Science and Engineering Program; Integrated Nanotechnology Lab; Computational Physics and Materials Science (CPMS); Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorSingh, Nirpendraen
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T11:46:07Zen
dc.date.available2015-08-03T11:46:07Zen
dc.date.issued2014-01-13en
dc.identifier.issn18626254en
dc.identifier.doi10.1002/pssr.201308300en
dc.identifier.urihttp://hdl.handle.net/10754/563338en
dc.description.abstractWe explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipThis work was supported by the OCRF Competitive Research Grant (CRG-1-2012-HUS-008) and the Provost Award for Aftab M. Hussain.en
dc.publisherWiley-Blackwellen
dc.subjectDensity functional theoryen
dc.subjectField-effect transistoren
dc.subjectSiSnen
dc.subjectTinen
dc.titleTin - an unlikely ally for silicon field effect transistors?en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journalphysica status solidi (RRL) - Rapid Research Lettersen
kaust.authorHussain, Aftab M.en
kaust.authorFahad, Hossain M.en
kaust.authorSingh, Nirpendraen
kaust.authorSevilla, Galo T.en
kaust.authorSchwingenschlögl, Udoen
kaust.authorHussain, Muhammad Mustafaen
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