Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

Handle URI:
http://hdl.handle.net/10754/563223
Title:
Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors
Authors:
Li, Jingqi; Wang, Qingxiao; Yue, Weisheng; Guo, Zaibing; LI, LIANG; Zhao, Chao ( 0000-0002-9582-1068 ) ; Wang, Xianbin; Abutaha, Anas I.; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Zhang, Yafei; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Core Labs
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Nanoscale
Issue Date:
2014
DOI:
10.1039/c4nr00978a
Type:
Article
ISSN:
20403364
Sponsors:
This research was supported by King Abdullah University of Science and Technology (KAUST). The authors would like to thank Zhihong Wang, Yang Yang, Longqing Chen, Basil Chew, Ahad A Syed, Elhadj M. Diallo and Abdulrazaq Alharbi in the Nanofabrication, Imaging & Characterization core labs at KAUST for their help in device fabrication and characterization.
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Jingqien
dc.contributor.authorWang, Qingxiaoen
dc.contributor.authorYue, Weishengen
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorLI, LIANGen
dc.contributor.authorZhao, Chaoen
dc.contributor.authorWang, Xianbinen
dc.contributor.authorAbutaha, Anas I.en
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorZhang, Yafeien
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-08-03T11:43:32Zen
dc.date.available2015-08-03T11:43:32Zen
dc.date.issued2014en
dc.identifier.issn20403364en
dc.identifier.doi10.1039/c4nr00978aen
dc.identifier.urihttp://hdl.handle.net/10754/563223en
dc.description.abstractSingle-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.en
dc.description.sponsorshipThis research was supported by King Abdullah University of Science and Technology (KAUST). The authors would like to thank Zhihong Wang, Yang Yang, Longqing Chen, Basil Chew, Ahad A Syed, Elhadj M. Diallo and Abdulrazaq Alharbi in the Nanofabrication, Imaging & Characterization core labs at KAUST for their help in device fabrication and characterization.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.titleIntegrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistorsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentCore Labsen
dc.identifier.journalNanoscaleen
dc.contributor.institutionResearch Institute of Micro/Nano Science Technology, Shanghai Jiao Tong University, Shanghai 200240, Chinaen
kaust.authorLi, Jingqien
kaust.authorWang, Qingxiaoen
kaust.authorYue, Weishengen
kaust.authorGuo, Zaibingen
kaust.authorLI, LIANGen
kaust.authorZhao, Chaoen
kaust.authorWang, Xianbinen
kaust.authorZhang, Xixiangen
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