Metal-free, single-polymer device exhibits resistive memory effect

Handle URI:
http://hdl.handle.net/10754/563158
Title:
Metal-free, single-polymer device exhibits resistive memory effect
Authors:
Bhansali, Unnat Sampatraj; Khan, Yasser; Cha, Dong Kyu; Almadhoun, Mahmoud N.; Li, Ruipeng; Chen, Long; Amassian, Aram ( 0000-0002-5734-1194 ) ; Odeh, Ihab N.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
All-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.
KAUST Department:
Materials Science and Engineering Program; SABIC - Corporate Research and Innovation Center (CRI) at KAUST; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Core Labs; Organic Electronics and Photovoltaics Group; Functional Nanomaterials and Devices Research Group
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
23-Dec-2013
DOI:
10.1021/nn403873c
Type:
Article
ISSN:
19360851
Sponsors:
The authors would like to thank Mrs. Supriya Chewle for her help with the artistic rendering of the images. H.N.A. acknowledges the financial support from the KAUST baseline fund and Saudi Basic Industries Corporation (SABIC) Grant No. 2000000015.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorBhansali, Unnat Sampatrajen
dc.contributor.authorKhan, Yasseren
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorAlmadhoun, Mahmoud N.en
dc.contributor.authorLi, Ruipengen
dc.contributor.authorChen, Longen
dc.contributor.authorAmassian, Aramen
dc.contributor.authorOdeh, Ihab N.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-03T11:37:08Zen
dc.date.available2015-08-03T11:37:08Zen
dc.date.issued2013-12-23en
dc.identifier.issn19360851en
dc.identifier.doi10.1021/nn403873cen
dc.identifier.urihttp://hdl.handle.net/10754/563158en
dc.description.abstractAll-polymer, write-once-read-many times resistive memory devices have been fabricated on flexible substrates using a single polymer, poly(3,4- ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS). Spin-cast or inkjet-printed films of solvent-modified PEDOT:PSS are used as electrodes, while the unmodified or as-is PEDOT:PSS is used as the semiconducting active layer. The all-polymer devices exhibit an irreversible but stable transition from a low resistance state (ON) to a high resistance state (OFF) at low voltages caused by an electric-field-induced morphological rearrangement of PEDOT and PSS at the electrode interface. However, in the metal-PEDOT:PSS-metal devices, we have shown a metal filament formation switching the device from an initial high resistance state (OFF) to the low resistance state (ON). The all-PEDOT:PSS memory device has low write voltages (<3 V), high ON/OFF ratio (>10 3), good retention characteristics (>10 000 s), and stability in ambient storage (>3 months). © 2013 American Chemical Society.en
dc.description.sponsorshipThe authors would like to thank Mrs. Supriya Chewle for her help with the artistic rendering of the images. H.N.A. acknowledges the financial support from the KAUST baseline fund and Saudi Basic Industries Corporation (SABIC) Grant No. 2000000015.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectflexible substratesen
dc.subjectmetal filamenten
dc.subjectPEDOT:PSSen
dc.subjectpolymer electrodesen
dc.subjectresistive memoryen
dc.subjectsolution processen
dc.titleMetal-free, single-polymer device exhibits resistive memory effecten
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentSABIC - Corporate Research and Innovation Center (CRI) at KAUSTen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentCore Labsen
dc.contributor.departmentOrganic Electronics and Photovoltaics Groupen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalACS Nanoen
kaust.authorBhansali, Unnat Sampatrajen
kaust.authorCha, Dong Kyuen
kaust.authorLi, Ruipengen
kaust.authorChen, Longen
kaust.authorAmassian, Aramen
kaust.authorAlshareef, Husam N.en
kaust.authorKhan, Yasseren
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