Combinatorial study of NaF addition in CIGSe films for high efficiency solar cells

Handle URI:
http://hdl.handle.net/10754/563143
Title:
Combinatorial study of NaF addition in CIGSe films for high efficiency solar cells
Authors:
Eid, Jessica; Liang, Haifan; Gereige, Issam; Lee, Sang; Van Duren, Jeroen K J
Abstract:
We report on a sodium fluoride (NaF) thickness variation study for the H2Se batch furnace selenization of sputtered Cu(In,Ga) films in a wide range of Cu(In,Ga) film compositions to form Cu(In,Ga)Se2 (CIGSe) films and solar cells. Literature review indicates lack of consensus on the mechanisms involved in Na altering CIGSe film properties. In this work, for sputtered and batch-selenized CIGSe, NaF addition results in reduced gallium content and an increase in grain size for the top portion of the CIGSe film, as observed by scanning electron microscopy and secondary ion mass spectrometry. The addition of up to 20nm of NaF resulted in an improvement in all relevant device parameters: open-circuit voltage, short-circuit current, and fill factor. The best results were found for 15nm NaF addition, resulting in solar cells with 16.0% active-area efficiency (without anti-reflective coating) at open-circuit voltage (VOC) of 674mV. © 2013 John Wiley & Sons, Ltd.
KAUST Department:
Solar and Photovoltaic Engineering Research Center (SPERC)
Publisher:
Wiley-Blackwell
Journal:
Progress in Photovoltaics: Research and Applications
Issue Date:
4-Dec-2013
DOI:
10.1002/pip.2419
Type:
Article
ISSN:
10627995
Appears in Collections:
Articles; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorEid, Jessicaen
dc.contributor.authorLiang, Haifanen
dc.contributor.authorGereige, Issamen
dc.contributor.authorLee, Sangen
dc.contributor.authorVan Duren, Jeroen K Jen
dc.date.accessioned2015-08-03T11:36:48Zen
dc.date.available2015-08-03T11:36:48Zen
dc.date.issued2013-12-04en
dc.identifier.issn10627995en
dc.identifier.doi10.1002/pip.2419en
dc.identifier.urihttp://hdl.handle.net/10754/563143en
dc.description.abstractWe report on a sodium fluoride (NaF) thickness variation study for the H2Se batch furnace selenization of sputtered Cu(In,Ga) films in a wide range of Cu(In,Ga) film compositions to form Cu(In,Ga)Se2 (CIGSe) films and solar cells. Literature review indicates lack of consensus on the mechanisms involved in Na altering CIGSe film properties. In this work, for sputtered and batch-selenized CIGSe, NaF addition results in reduced gallium content and an increase in grain size for the top portion of the CIGSe film, as observed by scanning electron microscopy and secondary ion mass spectrometry. The addition of up to 20nm of NaF resulted in an improvement in all relevant device parameters: open-circuit voltage, short-circuit current, and fill factor. The best results were found for 15nm NaF addition, resulting in solar cells with 16.0% active-area efficiency (without anti-reflective coating) at open-circuit voltage (VOC) of 674mV. © 2013 John Wiley & Sons, Ltd.en
dc.publisherWiley-Blackwellen
dc.subjectCIGSe absorber layeren
dc.subjectCombinatorial sputteringen
dc.subjectH2Se two-step processen
dc.subjectNa incorporationen
dc.subjectThin film solar cells (TFSCs)en
dc.titleCombinatorial study of NaF addition in CIGSe films for high efficiency solar cellsen
dc.typeArticleen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.identifier.journalProgress in Photovoltaics: Research and Applicationsen
dc.contributor.institutionIntermolecular, Inc.San Jose, CA, United Statesen
kaust.authorGereige, Issamen
kaust.authorEid, Jessicaen
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