Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process

Handle URI:
http://hdl.handle.net/10754/563092
Title:
Additive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first process
Authors:
Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We report the inherent increase in capacitance per unit planar area of state-of-the art high-κ integrated metal/insulator/metal capacitors (MIMCAPs) fabricated on flexible silicon fabric with release-first process. We methodically study and show that our approach to transform bulk silicon (100) into a flexible fabric adds an inherent advantage of enabling higher integration density dynamic random access memory (DRAM) on the same chip area. Our approach is to release an ultra-thin silicon (100) fabric (25 μm thick) from the bulk silicon wafer, then build MIMCAPs using sputtered aluminium electrodes and successive atomic layer depositions (ALD) without break-ing the vacuum of a high-κ aluminium oxide sandwiched between two tantalum nitride layers. This result shows that we can obtain flexible electronics on silicon without sacrificing the high density integration aspects and also utilize the non-planar geometry associated with fabrication process to obtain a higher integration density compared to bulk silicon integration due to an increased normalized capacitance per unit planar area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program
Publisher:
Wiley-Blackwell
Journal:
physica status solidi (RRL) - Rapid Research Letters
Issue Date:
20-Nov-2013
DOI:
10.1002/pssr.201308209
Type:
Article
ISSN:
18626254
Sponsors:
We would like to thank the KAUST OCRF Competitive Research Grant: CRG-1-2012-HUS-008.
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T11:35:36Zen
dc.date.available2015-08-03T11:35:36Zen
dc.date.issued2013-11-20en
dc.identifier.issn18626254en
dc.identifier.doi10.1002/pssr.201308209en
dc.identifier.urihttp://hdl.handle.net/10754/563092en
dc.description.abstractWe report the inherent increase in capacitance per unit planar area of state-of-the art high-κ integrated metal/insulator/metal capacitors (MIMCAPs) fabricated on flexible silicon fabric with release-first process. We methodically study and show that our approach to transform bulk silicon (100) into a flexible fabric adds an inherent advantage of enabling higher integration density dynamic random access memory (DRAM) on the same chip area. Our approach is to release an ultra-thin silicon (100) fabric (25 μm thick) from the bulk silicon wafer, then build MIMCAPs using sputtered aluminium electrodes and successive atomic layer depositions (ALD) without break-ing the vacuum of a high-κ aluminium oxide sandwiched between two tantalum nitride layers. This result shows that we can obtain flexible electronics on silicon without sacrificing the high density integration aspects and also utilize the non-planar geometry associated with fabrication process to obtain a higher integration density compared to bulk silicon integration due to an increased normalized capacitance per unit planar area. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipWe would like to thank the KAUST OCRF Competitive Research Grant: CRG-1-2012-HUS-008.en
dc.publisherWiley-Blackwellen
dc.subjectCapacitanceen
dc.subjectFlexible electronicsen
dc.subjectMetal-insulator-metal capacitorsen
dc.subjectSiliconen
dc.titleAdditive advantage in characteristics of MIMCAPs on flexible silicon (100) fabric with release-first processen
dc.typeArticleen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.identifier.journalphysica status solidi (RRL) - Rapid Research Lettersen
kaust.authorGhoneim, Mohamed T.en
kaust.authorRojas, Jhonathan Prietoen
kaust.authorHussain, Aftab M.en
kaust.authorHussain, Muhammad Mustafaen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.