P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

Handle URI:
http://hdl.handle.net/10754/563038
Title:
P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures
Authors:
Al-Jawhari, Hala A.; Caraveo-Frescas, Jesus Alfonso; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Core Labs; Functional Nanomaterials and Devices Research Group
Publisher:
American Chemical Society (ACS)
Journal:
ACS Applied Materials & Interfaces
Issue Date:
9-Oct-2013
DOI:
10.1021/am402542j
Type:
Article
ISSN:
19448244
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorAl-Jawhari, Hala A.en
dc.contributor.authorCaraveo-Frescas, Jesus Alfonsoen
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-03T11:34:19Zen
dc.date.available2015-08-03T11:34:19Zen
dc.date.issued2013-10-09en
dc.identifier.issn19448244en
dc.identifier.doi10.1021/am402542jen
dc.identifier.urihttp://hdl.handle.net/10754/563038en
dc.description.abstractP-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectbilayer channelen
dc.subjectcuprous oxideen
dc.subjectoxide semiconductorsen
dc.subjectthin film transistoren
dc.subjecttin monoxideen
dc.titleP-type Cu2O/SnO bilayer thin film transistors processed at low temperaturesen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentCore Labsen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalACS Applied Materials & Interfacesen
dc.contributor.institutionDepartment of Physics, King Abdulaziz University, Jeddah 21589, Saudi Arabiaen
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorHedhili, Mohamed N.en
kaust.authorAlshareef, Husam N.en
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