Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

Handle URI:
http://hdl.handle.net/10754/563021
Title:
Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric
Authors:
Rojas, Jhonathan Prieto ( 0000-0001-7848-1121 ) ; Ghoneim, Mohamed T. ( 0000-0002-5568-5284 ) ; Young, Chadwin; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\rm cm}2 and thickness: 25 \mu{\rm m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Transactions on Electron Devices
Issue Date:
Oct-2013
DOI:
10.1109/TED.2013.2278186
Type:
Article
ISSN:
00189383
Sponsors:
This work was supported in part by King Abdullah University of Science and Technology Office of Competitive Research Fund and in part by the Competitive Research under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor H. Shang.
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorRojas, Jhonathan Prietoen
dc.contributor.authorGhoneim, Mohamed T.en
dc.contributor.authorYoung, Chadwinen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T11:33:54Zen
dc.date.available2015-08-03T11:33:54Zen
dc.date.issued2013-10en
dc.identifier.issn00189383en
dc.identifier.doi10.1109/TED.2013.2278186en
dc.identifier.urihttp://hdl.handle.net/10754/563021en
dc.description.abstractImplementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\rm cm}2 and thickness: 25 \mu{\rm m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.en
dc.description.sponsorshipThis work was supported in part by King Abdullah University of Science and Technology Office of Competitive Research Fund and in part by the Competitive Research under Grant CRG-1-2012-HUS-008. The review of this paper was arranged by Editor H. Shang.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectBending curvatureen
dc.subjectflexibleen
dc.subjecthigh ken
dc.subjectmetal gateen
dc.subjectmetal-insulator-metal capacitors (MIMCAPs)en
dc.subjectsilicon (100)en
dc.titleFlexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabricen
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalIEEE Transactions on Electron Devicesen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas, Dallas, TX 75080, United Statesen
kaust.authorRojas, Jhonathan Prietoen
kaust.authorGhoneim, Mohamed T.en
kaust.authorHussain, Muhammad Mustafaen
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