Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate

Handle URI:
http://hdl.handle.net/10754/563020
Title:
Post-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrate
Authors:
Aktakka, Ethem Erkan; Ghafouri, Niloufar; Smith, Casey; Peterson, Rebecca Lorenz; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 ) ; Najafi, Khalil
Abstract:
This letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Electron Device Letters
Issue Date:
Oct-2013
DOI:
10.1109/LED.2013.2277693
Type:
Article
ISSN:
07413106
Sponsors:
This work was supported by King Abdullah University of Science and Technology through an Academic Excellence Alliance Global Collaborative Research Grant. The review of this letter was arranged by Editor J. Cai.
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorAktakka, Ethem Erkanen
dc.contributor.authorGhafouri, Niloufaren
dc.contributor.authorSmith, Caseyen
dc.contributor.authorPeterson, Rebecca Lorenzen
dc.contributor.authorHussain, Muhammad Mustafaen
dc.contributor.authorNajafi, Khalilen
dc.date.accessioned2015-08-03T11:33:52Zen
dc.date.available2015-08-03T11:33:52Zen
dc.date.issued2013-10en
dc.identifier.issn07413106en
dc.identifier.doi10.1109/LED.2013.2277693en
dc.identifier.urihttp://hdl.handle.net/10754/563020en
dc.description.abstractThis letter reports, for the first time, heterogeneous integration of bismuth telluride (Bi2Te3) and antimony telluride (Sb 2Te3) thin-film-based thermoelectric ffect transistors) via a characterized TE-film coevaporationand shadow-mask patterning process using predeposition surface treatment methods for reduced TE-metal contact resistance. As a demonstration vehicle, a 2 × 2 mm2-sized integrated planar thermoelectric generator (TEG) is shown to harvest 0.7 μ W from 21-K temperature gradient. Transistor performance showed no significant change upon post-CMOS TEG integration, indicating, for the first time, the CMOS compatibility of the Bi2Te3 and Sb2Te3 thin films, which could be leveraged for realization of high-performance integrated micro-TE harvesters and coolers. © 2013 IEEE.en
dc.description.sponsorshipThis work was supported by King Abdullah University of Science and Technology through an Academic Excellence Alliance Global Collaborative Research Grant. The review of this letter was arranged by Editor J. Cai.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.subjectAntimony telluride (Sb2Te3)en
dc.subjectbismuth telluride (Bi2Te 3)en
dc.subjectCMOSen
dc.subjectFinFETen
dc.subjectheterogeneous integrationen
dc.subjectthermoelectricity.en
dc.titlePost-CMOS FinFET integration of bismuth telluride and antimony telluride thin-film-based thermoelectric devices on SoI substrateen
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalIEEE Electron Device Lettersen
dc.contributor.institutionElectrical Engineering and Computer Science Department, University of Michigan, Ann Arbor, MI 48109-2122, United Statesen
kaust.authorSmith, Caseyen
kaust.authorHussain, Muhammad Mustafaen
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