Study of optical absorbance in porous silicon nanowires for photovoltaic applications

Handle URI:
http://hdl.handle.net/10754/563017
Title:
Study of optical absorbance in porous silicon nanowires for photovoltaic applications
Authors:
Charrier, Joël; Najar, Adel; Pirasteh, Parastesh
Abstract:
Porous silicon nanowires (PSiNWs) layers fabrication was reported. Reflectance spectra were measured as a function of the nanowire length and were inferior to 0.1% and a strong photoluminescence (PL) signal was measured from samples. Models based on cone shape of nanowires located in circular and rectangular bases were used to calculate the reflectance using the transfer matrix formalism (TMF) of PSiNWs layer. The modeling of the reflectance permits to explain this value by taking account into the shape of the nanowires and its porosity. Optical absorbance and transmission were also theoretically studied. The absorbance was superior to that obtained with silicon nanowires and the ultimate efficiency was about equal to 25% for normal incidence angle. These results could be applied to the potential application in low-cost and high efficiency PSiNWs based solar cells. © 2013 Elsevier B.V. All rights reserved.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Elsevier BV
Journal:
Applied Surface Science
Issue Date:
Oct-2013
DOI:
10.1016/j.apsusc.2013.07.026
Type:
Article
ISSN:
01694332
Appears in Collections:
Articles; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorCharrier, Joëlen
dc.contributor.authorNajar, Adelen
dc.contributor.authorPirasteh, Parasteshen
dc.date.accessioned2015-08-03T11:33:48Zen
dc.date.available2015-08-03T11:33:48Zen
dc.date.issued2013-10en
dc.identifier.issn01694332en
dc.identifier.doi10.1016/j.apsusc.2013.07.026en
dc.identifier.urihttp://hdl.handle.net/10754/563017en
dc.description.abstractPorous silicon nanowires (PSiNWs) layers fabrication was reported. Reflectance spectra were measured as a function of the nanowire length and were inferior to 0.1% and a strong photoluminescence (PL) signal was measured from samples. Models based on cone shape of nanowires located in circular and rectangular bases were used to calculate the reflectance using the transfer matrix formalism (TMF) of PSiNWs layer. The modeling of the reflectance permits to explain this value by taking account into the shape of the nanowires and its porosity. Optical absorbance and transmission were also theoretically studied. The absorbance was superior to that obtained with silicon nanowires and the ultimate efficiency was about equal to 25% for normal incidence angle. These results could be applied to the potential application in low-cost and high efficiency PSiNWs based solar cells. © 2013 Elsevier B.V. All rights reserved.en
dc.publisherElsevier BVen
dc.subjectAg-electroless etchingen
dc.subjectPhotovoltaicen
dc.subjectPorous silicon nanowiresen
dc.titleStudy of optical absorbance in porous silicon nanowires for photovoltaic applicationsen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalApplied Surface Scienceen
dc.contributor.institutionUniversite Europeenne de Bretagne, CNRS FOTON, UMR 6082, BP80518, F-22305 Lannion Cedex, Franceen
kaust.authorNajar, Adelen
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