Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films

Handle URI:
http://hdl.handle.net/10754/562934
Title:
Magnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN films
Authors:
Duan, Xiaofei; Mi, Wenbo; Guo, Zaibing; Bai, Haili
Abstract:
The reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. © 2013 Elsevier B.V. All rights reserved.
KAUST Department:
Core Labs
Publisher:
Elsevier BV
Journal:
Thin Solid Films
Issue Date:
Sep-2013
DOI:
10.1016/j.tsf.2013.06.068
Type:
Article
ISSN:
00406090
Sponsors:
This work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorDuan, Xiaofeien
dc.contributor.authorMi, Wenboen
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorBai, Hailien
dc.date.accessioned2015-08-03T11:16:07Zen
dc.date.available2015-08-03T11:16:07Zen
dc.date.issued2013-09en
dc.identifier.issn00406090en
dc.identifier.doi10.1016/j.tsf.2013.06.068en
dc.identifier.urihttp://hdl.handle.net/10754/562934en
dc.description.abstractThe reactive-sputtered polycrystalline Ti1 - xCrxN films with 0.17 ≤ x ≤ 0.51 are ferromagnetic and at x = 0.47 the Curie temperature TC shows a maximum of ~ 120 K. The films are metallic at 0 ≤ x ≤ 0.47, while the films with x = 0.51 and 0.78 are semiconducting-like. The upturn of resistivity below 70 K observed in the films with 0.10 ≤ x ≤ 0.47 is from the effects of the electron-electron interaction and weak localization. The negative magnetoresistance (MR) of the films with 0.10 ≤ x ≤ 0.51 is dominated by the double-exchange interaction, while at x = 0.78, MR is related to the localized magnetic moment scattering at the grain boundaries. The scaling ρxyA/n ∝ ρxx2.19 suggests that the anomalous Hall effect in the polycrystalline Ti1 - xCrxN films is scattering-independent. © 2013 Elsevier B.V. All rights reserved.en
dc.description.sponsorshipThis work was supported by the National Natural Science Foundation of China (51171126) and the Key Project of the Natural Science Foundation of Tianjin City (12JCZDJC27100).en
dc.publisherElsevier BVen
dc.subjectAnomalousen
dc.subjectHall effecten
dc.subjectMagnetic thin filmsen
dc.subjectMagnetoresistanceen
dc.subjectNitridesen
dc.subjectReactive sputteringen
dc.titleMagnetoresistance and anomalous Hall effect of reactive sputtered polycrystalline Ti1 - XCrxN filmsen
dc.typeArticleen
dc.contributor.departmentCore Labsen
dc.identifier.journalThin Solid Filmsen
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Institute of Advanced Materials Physics, Tianjin University, Tianjin 300072, Chinaen
kaust.authorGuo, Zaibingen
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