Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)

Handle URI:
http://hdl.handle.net/10754/562910
Title:
Thermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)
Authors:
Hussain, Aftab M. ( 0000-0002-9516-9428 ) ; Fahad, Hossain M.; Sevilla, Galo T. ( 0000-0002-9419-4437 ) ; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
We demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Publisher:
Wiley-Blackwell
Journal:
physica status solidi (RRL) - Rapid Research Letters
Issue Date:
16-Aug-2013
DOI:
10.1002/pssr.201308019
Type:
Article
ISSN:
18626254
Sponsors:
This work is supported under Competitive Research Grant Funding Program (CRG-1-2012-HUS-008) by KAUST Office of Competitive Research Funds (OCRF).
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHussain, Aftab M.en
dc.contributor.authorFahad, Hossain M.en
dc.contributor.authorSevilla, Galo T.en
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T11:15:06Zen
dc.date.available2015-08-03T11:15:06Zen
dc.date.issued2013-08-16en
dc.identifier.issn18626254en
dc.identifier.doi10.1002/pssr.201308019en
dc.identifier.urihttp://hdl.handle.net/10754/562910en
dc.description.abstractWe demonstrate a simple, low-cost, and scalable process for obtaining uniform, smooth surfaced, high quality mono-crystalline germanium (100) thin films on silicon (100). The germanium thin films were deposited on a silicon substrate using plasma-assisted sputtering based physical vapor deposition. They were crystallized by annealing at various temperatures ranging from 700 °C to 1100 °C. We report that the best quality germanium thin films are obtained above the melting point of germanium (937 °C), thus offering a method for in-situ Czochralski process. We show well-behaved high-κ /metal gate metal-oxide-semiconductor capacitors (MOSCAPs) using this film. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipThis work is supported under Competitive Research Grant Funding Program (CRG-1-2012-HUS-008) by KAUST Office of Competitive Research Funds (OCRF).en
dc.publisherWiley-Blackwellen
dc.subjectCrystallizationen
dc.subjectGermaniumen
dc.subjectMOSCAPen
dc.subjectPhysical vapor depositionen
dc.subjectSurface roughnessen
dc.subjectThin filmsen
dc.titleThermal recrystallization of physical vapor deposition based germanium thin films on bulk silicon (100)en
dc.typeArticleen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalphysica status solidi (RRL) - Rapid Research Lettersen
kaust.authorHussain, Aftab M.en
kaust.authorFahad, Hossain M.en
kaust.authorSevilla, Galo T.en
kaust.authorHussain, Muhammad Mustafaen
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