High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping

Handle URI:
http://hdl.handle.net/10754/562905
Title:
High temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium doping
Authors:
Sarath Kumar, S. R.; Barasheed, Abeer Z.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
We report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Functional Nanomaterials and Devices Research Group
Publisher:
American Chemical Society (ACS)
Journal:
ACS Applied Materials & Interfaces
Issue Date:
14-Aug-2013
DOI:
10.1021/am4015956
Type:
Article
ISSN:
19448244
Sponsors:
This work was supported by the FIC grant of KAUST, for oxide thermoelectrics. Authors also thank Dr. Alexandre Jacquot, Fraunhofer IPM, Germany for the thermal conductivity measurements.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorSarath Kumar, S. R.en
dc.contributor.authorBarasheed, Abeer Z.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-03T11:14:52Zen
dc.date.available2015-08-03T11:14:52Zen
dc.date.issued2013-08-14en
dc.identifier.issn19448244en
dc.identifier.doi10.1021/am4015956en
dc.identifier.urihttp://hdl.handle.net/10754/562905en
dc.description.abstractWe report the evolution of high temperature thermoelectric properties of SrTiO3 thin films doped with Nb and oxygen vacancies. Structure-property relations in this important thermoelectric oxide are elucidated and the variation of transport properties with dopant concentrations is discussed. Oxygen vacancies are incorporated during growth or annealing in Ar/H2 above 800 K. An increase in lattice constant due to the inclusion of Nb and oxygen vacancies is found to result in an increase in carrier density and electrical conductivity with simultaneous decrease in carrier effective mass and Seebeck coefficient. The lattice thermal conductivity at 300 K is found to be 2.22 W m-1 K-1, and the estimated figure of merit is 0.29 at 1000 K. © 2013 American Chemical Society.en
dc.description.sponsorshipThis work was supported by the FIC grant of KAUST, for oxide thermoelectrics. Authors also thank Dr. Alexandre Jacquot, Fraunhofer IPM, Germany for the thermal conductivity measurements.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectoxide semiconductorsen
dc.subjectoxygen vacanciesen
dc.subjectpulsed laser depositionen
dc.subjectthermoelectricsen
dc.subjecttransport propertiesen
dc.titleHigh temperature thermoelectric properties of strontium titanate thin films with oxygen vacancy and niobium dopingen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalACS Applied Materials & Interfacesen
kaust.authorAlshareef, Husam N.en
kaust.authorSarath Kumar, S. R.en
kaust.authorBarasheed, Abeer Z.en
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