Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s

Handle URI:
http://hdl.handle.net/10754/562870
Title:
Low-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·s
Authors:
Smith, Casey; Qaisi, Ramy M. ( 0000-0003-0968-5483 ) ; Liu, Zhihong; Yu, Qingkai; Hussain, Muhammad Mustafa ( 0000-0003-3279-0441 )
Abstract:
Utilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Integrated Nanotechnology Lab
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
23-Jul-2013
DOI:
10.1021/nn400796b
PubMed ID:
23777434
Type:
Article
ISSN:
19360851
Appears in Collections:
Articles; Electrical Engineering Program; Integrated Nanotechnology Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSmith, Caseyen
dc.contributor.authorQaisi, Ramy M.en
dc.contributor.authorLiu, Zhihongen
dc.contributor.authorYu, Qingkaien
dc.contributor.authorHussain, Muhammad Mustafaen
dc.date.accessioned2015-08-03T11:13:32Zen
dc.date.available2015-08-03T11:13:32Zen
dc.date.issued2013-07-23en
dc.identifier.issn19360851en
dc.identifier.pmid23777434en
dc.identifier.doi10.1021/nn400796ben
dc.identifier.urihttp://hdl.handle.net/10754/562870en
dc.description.abstractUtilization of graphene may help realize innovative low-power replacements for III-V materials based high electron mobility transistors while extending operational frequencies closer to the THz regime for superior wireless communications, imaging, and other novel applications. Device architectures explored to date suffer a fundamental performance roadblock due to lack of compatible deposition techniques for nanometer-scale dielectrics required to efficiently modulate graphene transconductance (gm) while maintaining low gate capacitance-voltage product (CgsVgs). Here we show integration of a scaled (10 nm) high-κ gate dielectric aluminum oxide (Al2O3) with an atmospheric pressure chemical vapor deposition (APCVD)-derived graphene channel composed of multiple 0.25 μm stripes to repeatedly realize room-temperature mobility of 11 000 cm 2/V·s or higher. This high performance is attributed to the APCVD graphene growth quality, excellent interfacial properties of the gate dielectric, conductivity enhancement in the graphene stripes due to low t ox/Wgraphene ratio, and scaled high-κ dielectric gate modulation of carrier density allowing full actuation of the device with only ±1 V applied bias. The superior drive current and conductance at Vdd = 1 V compared to other top-gated devices requiring undesirable seed (such as aluminum and poly vinyl alcohol)-assisted dielectric deposition, bottom gate devices requiring excessive gate voltage for actuation, or monolithic (nonstriped) channels suggest that this facile transistor structure provides critical insight toward future device design and process integration to maximize CVD-based graphene transistor performance. © 2013 American Chemical Society.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectAl2O 3en
dc.subjectback-gateen
dc.subjectgrapheneen
dc.subjecthigh-κen
dc.subjectmobilityen
dc.subjectstriped channelen
dc.titleLow-voltage back-gated atmospheric pressure chemical vapor deposition based graphene-striped channel transistor with high-κ dielectric showing room-temperature mobility > 11 000 cm2/V·sen
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentIntegrated Nanotechnology Laben
dc.identifier.journalACS Nanoen
dc.contributor.institutionIngram School of Engineering, Texas State University, San Marcos, TX, United Statesen
kaust.authorSmith, Caseyen
kaust.authorQaisi, Ramy M.en
kaust.authorHussain, Muhammad Mustafaen

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