High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c

Handle URI:
http://hdl.handle.net/10754/562822
Title:
High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c
Authors:
Lin, Yenhung; Faber, Hendrik; Zhao, Kui ( 0000-0001-9348-7943 ) ; Wang, Qingxiao; Amassian, Aram ( 0000-0002-5734-1194 ) ; McLachlan, Martyn A.; Anthopoulos, Thomas D.
Abstract:
An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC); Core Labs; Organic Electronics and Photovoltaics Group
Publisher:
Wiley-Blackwell
Journal:
Advanced Materials
Issue Date:
25-Jun-2013
DOI:
10.1002/adma.201301622
Type:
Article
ISSN:
09359648
Sponsors:
Y. H. L., H. F., M. M., and T. D. A. are grateful to Dutch Polymer Institute (DPI) S-PLORE grant no. 735, and European Research Council (ERC) AMPRO project no. 280221 for financial support.
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorLin, Yenhungen
dc.contributor.authorFaber, Hendriken
dc.contributor.authorZhao, Kuien
dc.contributor.authorWang, Qingxiaoen
dc.contributor.authorAmassian, Aramen
dc.contributor.authorMcLachlan, Martyn A.en
dc.contributor.authorAnthopoulos, Thomas D.en
dc.date.accessioned2015-08-03T11:11:35Zen
dc.date.available2015-08-03T11:11:35Zen
dc.date.issued2013-06-25en
dc.identifier.issn09359648en
dc.identifier.doi10.1002/adma.201301622en
dc.identifier.urihttp://hdl.handle.net/10754/562822en
dc.description.abstractAn aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipY. H. L., H. F., M. M., and T. D. A. are grateful to Dutch Polymer Institute (DPI) S-PLORE grant no. 735, and European Research Council (ERC) AMPRO project no. 280221 for financial support.en
dc.publisherWiley-Blackwellen
dc.subjectplastic electronicsen
dc.subjectsolution processingen
dc.subjectthin film transistorsen
dc.subjecttransparent electronicsen
dc.subjectUV conversionen
dc.subjectzinc oxideen
dc.titleHigh-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °cen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentCore Labsen
dc.contributor.departmentOrganic Electronics and Photovoltaics Groupen
dc.identifier.journalAdvanced Materialsen
dc.contributor.institutionDepartment of Physics, Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, United Kingdomen
dc.contributor.institutionDepartment of Materials, Imperial College London, London Royal School of Mines, London SW7 2AZ, United Kingdomen
kaust.authorZhao, Kuien
kaust.authorWang, Qingxiaoen
kaust.authorAmassian, Aramen
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