Record mobility in transparent p-type tin monoxide films and devices by phase engineering

Handle URI:
http://hdl.handle.net/10754/562821
Title:
Record mobility in transparent p-type tin monoxide films and devices by phase engineering
Authors:
Caraveo-Frescas, Jesus Alfonso; Nayak, Pradipta K.; Al-Jawhari, Hala A.; Bianchi Granato, Danilo; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
Here, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide. © 2013 American Chemical Society.
KAUST Department:
Materials Science and Engineering Program; Physical Sciences and Engineering (PSE) Division; Computational Physics and Materials Science (CPMS); Functional Nanomaterials and Devices Research Group
Publisher:
American Chemical Society (ACS)
Journal:
ACS Nano
Issue Date:
25-Jun-2013
DOI:
10.1021/nn400852r
Type:
Article
ISSN:
19360851
Sponsors:
The authors thank Dongkyu Cha for the TEM and SEM images and Nejib Hedhili for the XPS measurements. J. A. Caraveo-Frescas thanks the KAUST nanofabrication and thin film facilities personnel for their support. H. N. Alshareef acknowledges the generous support of the KAUST baseline fund.
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Computational Physics and Materials Science (CPMS)

Full metadata record

DC FieldValue Language
dc.contributor.authorCaraveo-Frescas, Jesus Alfonsoen
dc.contributor.authorNayak, Pradipta K.en
dc.contributor.authorAl-Jawhari, Hala A.en
dc.contributor.authorBianchi Granato, Daniloen
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-03T11:11:33Zen
dc.date.available2015-08-03T11:11:33Zen
dc.date.issued2013-06-25en
dc.identifier.issn19360851en
dc.identifier.doi10.1021/nn400852ren
dc.identifier.urihttp://hdl.handle.net/10754/562821en
dc.description.abstractHere, we report the fabrication of nanoscale (15 nm) fully transparent p-type SnO thin film transistors (TFT) at temperatures as low as 180 C with record device performance. Specifically, by carefully controlling the process conditions, we have developed SnO thin films with a Hall mobility of 18.71 cm2 V-1 s-1 and fabricated TFT devices with a linear field-effect mobility of 6.75 cm2 V-1 s -1 and 5.87 cm2 V-1 s-1 on transparent rigid and translucent flexible substrates, respectively. These values of mobility are the highest reported to date for any p-type oxide processed at this low temperature. We further demonstrate that this high mobility is realized by careful phase engineering. Specifically, we show that phase-pure SnO is not necessarily the highest mobility phase; instead, well-controlled amounts of residual metallic tin are shown to substantially increase the hole mobility. A detailed phase stability map for physical vapor deposition of nanoscale SnO is constructed for the first time for this p-type oxide. © 2013 American Chemical Society.en
dc.description.sponsorshipThe authors thank Dongkyu Cha for the TEM and SEM images and Nejib Hedhili for the XPS measurements. J. A. Caraveo-Frescas thanks the KAUST nanofabrication and thin film facilities personnel for their support. H. N. Alshareef acknowledges the generous support of the KAUST baseline fund.en
dc.publisherAmerican Chemical Society (ACS)en
dc.subjectp-type oxideen
dc.subjectthin-film transistorsen
dc.subjecttin monoxideen
dc.titleRecord mobility in transparent p-type tin monoxide films and devices by phase engineeringen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentComputational Physics and Materials Science (CPMS)en
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalACS Nanoen
dc.contributor.institutionDepartment of Physics, King Abdulaziz University, Jeddah 21589, Saudi Arabiaen
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorNayak, Pradipta K.en
kaust.authorSchwingenschlögl, Udoen
kaust.authorAlshareef, Husam N.en
kaust.authorBianchi Granato, Daniloen
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