Phase transitions and optical characterization of lead-free piezoelectric (K0.5Na0.5)0.96Li0.04(Nb 0.8Ta0.2)O3 thin films

Handle URI:
http://hdl.handle.net/10754/562794
Title:
Phase transitions and optical characterization of lead-free piezoelectric (K0.5Na0.5)0.96Li0.04(Nb 0.8Ta0.2)O3 thin films
Authors:
Yao, Yingbang; Chan, H. T.; Mak, C. L.; Wong, Kinhung
Abstract:
Lead-free piezoelectric thin films, (K0.5Na0.5) 0.96Li0.04(Nb0.8Ta0.2)O 3, were epitaxially grown on MgO(001) and Nb-doped SrTiO 3(001) substrates using pulsed laser deposition. The optimum deposition temperature was found to be 600 C. Two types of in-plane orientations were observed in the films depending on the substrates used. The transmittance and photoluminescence spectra as well as the dielectric and ferroelectric properties of the films were measured. The measured band-gap energy was found to be decreased with the deposition temperature. The dielectric constant decreased from 550 to 300 as the frequency increased from 100 Hz to 1 MHz. The measured remnant polarization and coercive field were 4 μC/cm2 and 68 kV/cm, respectively. The phase transitions of the films were studied by Raman spectroscopy. Two distinct anomalies originating from the cubic-to-tetragonal (TC-T ~ 300 C) and tetragonal-to-orthorhombic (TT-O ~ 120 C) phase transitions were observed. Our results show that Raman spectroscopy is a powerful tool in identifying the phase transitions in ferroelectric thin films. © 2013 Elsevier B.V.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Core Labs
Publisher:
Elsevier BV
Journal:
Thin Solid Films
Issue Date:
Jun-2013
DOI:
10.1016/j.tsf.2013.04.043
Type:
Article
ISSN:
00406090
Sponsors:
This research was supported by a research grant of the Hong Kong Polytechnic University (GU693).
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorYao, Yingbangen
dc.contributor.authorChan, H. T.en
dc.contributor.authorMak, C. L.en
dc.contributor.authorWong, Kinhungen
dc.date.accessioned2015-08-03T11:06:01Zen
dc.date.available2015-08-03T11:06:01Zen
dc.date.issued2013-06en
dc.identifier.issn00406090en
dc.identifier.doi10.1016/j.tsf.2013.04.043en
dc.identifier.urihttp://hdl.handle.net/10754/562794en
dc.description.abstractLead-free piezoelectric thin films, (K0.5Na0.5) 0.96Li0.04(Nb0.8Ta0.2)O 3, were epitaxially grown on MgO(001) and Nb-doped SrTiO 3(001) substrates using pulsed laser deposition. The optimum deposition temperature was found to be 600 C. Two types of in-plane orientations were observed in the films depending on the substrates used. The transmittance and photoluminescence spectra as well as the dielectric and ferroelectric properties of the films were measured. The measured band-gap energy was found to be decreased with the deposition temperature. The dielectric constant decreased from 550 to 300 as the frequency increased from 100 Hz to 1 MHz. The measured remnant polarization and coercive field were 4 μC/cm2 and 68 kV/cm, respectively. The phase transitions of the films were studied by Raman spectroscopy. Two distinct anomalies originating from the cubic-to-tetragonal (TC-T ~ 300 C) and tetragonal-to-orthorhombic (TT-O ~ 120 C) phase transitions were observed. Our results show that Raman spectroscopy is a powerful tool in identifying the phase transitions in ferroelectric thin films. © 2013 Elsevier B.V.en
dc.description.sponsorshipThis research was supported by a research grant of the Hong Kong Polytechnic University (GU693).en
dc.publisherElsevier BVen
dc.subjectKNN-LTen
dc.subjectLead-free piezoelectricen
dc.subjectOptical propertiesen
dc.subjectPhase transitionen
dc.subjectPulse laser depositionen
dc.subjectRaman spectroscopyen
dc.titlePhase transitions and optical characterization of lead-free piezoelectric (K0.5Na0.5)0.96Li0.04(Nb 0.8Ta0.2)O3 thin filmsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentCore Labsen
dc.identifier.journalThin Solid Filmsen
dc.contributor.institutionDepartment of Applied Physics, Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kongen
kaust.authorYao, Yingbangen
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