Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

Handle URI:
http://hdl.handle.net/10754/562768
Title:
Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures
Authors:
Zong, Baoyu; Goh, J. Y.; Guo, Zaibing; Luo, Ping; Wang, Chenchen; Qiu, Jinjun; Ho, Pin; Chen, Yunjie; Zhang, Mingsheng; Han, Guchang
Abstract:
A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half-pitch without alignment issues. Depending on the different dry-etch mechanisms in transferring high and low density nanopatterns, suitable dry-etch angles and methods are studied for the transfer of high density nanopatterns. Some novel process methods have also been developed to eliminate the sidewall and other conversion obstacles for obtaining high density of uniform metallic nanopatterns. With these methods, ultrahigh density trilayer crossbar devices (∼2 × 1010 bit cm-2-kilobit electronic memory), which are composed of built-in practical magnetoresistive nanocells, have been achieved. This scalable process that we have developed provides the relevant industries with a cheap means to commercially fabricate three-dimensional high density metal-cell-metal nanodevices. © 2013 IOP Publishing Ltd.
KAUST Department:
Core Labs
Publisher:
IOP Publishing
Journal:
Nanotechnology
Issue Date:
20-May-2013
DOI:
10.1088/0957-4484/24/24/245303
Type:
Article
ISSN:
09574484
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorZong, Baoyuen
dc.contributor.authorGoh, J. Y.en
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorLuo, Pingen
dc.contributor.authorWang, Chenchenen
dc.contributor.authorQiu, Jinjunen
dc.contributor.authorHo, Pinen
dc.contributor.authorChen, Yunjieen
dc.contributor.authorZhang, Mingshengen
dc.contributor.authorHan, Guchangen
dc.date.accessioned2015-08-03T11:05:02Zen
dc.date.available2015-08-03T11:05:02Zen
dc.date.issued2013-05-20en
dc.identifier.issn09574484en
dc.identifier.doi10.1088/0957-4484/24/24/245303en
dc.identifier.urihttp://hdl.handle.net/10754/562768en
dc.description.abstractA novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half-pitch without alignment issues. Depending on the different dry-etch mechanisms in transferring high and low density nanopatterns, suitable dry-etch angles and methods are studied for the transfer of high density nanopatterns. Some novel process methods have also been developed to eliminate the sidewall and other conversion obstacles for obtaining high density of uniform metallic nanopatterns. With these methods, ultrahigh density trilayer crossbar devices (∼2 × 1010 bit cm-2-kilobit electronic memory), which are composed of built-in practical magnetoresistive nanocells, have been achieved. This scalable process that we have developed provides the relevant industries with a cheap means to commercially fabricate three-dimensional high density metal-cell-metal nanodevices. © 2013 IOP Publishing Ltd.en
dc.publisherIOP Publishingen
dc.titleFabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch proceduresen
dc.typeArticleen
dc.contributor.departmentCore Labsen
dc.identifier.journalNanotechnologyen
dc.contributor.institutionTemasek Laboratories, National University of Singapore, #09-02, 5A Engineering Drive 1, 117411, Singapore, Singaporeen
dc.contributor.institutionData Storage Institute, Agency for Science, Technology and Research (A STAR), DSI Building, 5 Engineering Drive 1, 117608, Singapore, Singaporeen
dc.contributor.institutionNational Junior College, 37 Hillcrest Road, 288913, Singapore, Singaporeen
kaust.authorGuo, Zaibingen
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