Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors

Handle URI:
http://hdl.handle.net/10754/562759
Title:
Impact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistors
Authors:
Nayak, Pradipta K.; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Cha, Dong Kyu; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
It is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.
KAUST Department:
Materials Science and Engineering Program; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Core Labs; Functional Nanomaterials and Devices Research Group
Publisher:
American Chemical Society
Journal:
ACS Applied Materials and Interfaces
Issue Date:
8-May-2013
DOI:
10.1021/am303235z
Type:
Article
ISSN:
19448244
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorNayak, Pradipta K.en
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-08-03T11:04:41Zen
dc.date.available2015-08-03T11:04:41Zen
dc.date.issued2013-05-08en
dc.identifier.issn19448244en
dc.identifier.doi10.1021/am303235zen
dc.identifier.urihttp://hdl.handle.net/10754/562759en
dc.description.abstractIt is demonstrated that soft annealing duration strongly affects the performance of solution-processed amorphous zinc tin oxide thin-film transistors. Prolonged soft annealing times are found to induce two important changes in the device: (i) a decrease in zinc tin oxide film thickness, and (ii) an increase in oxygen vacancy concentration. The devices prepared without soft annealing exhibited inferior transistor performances, in comparison to devices in which the active channel layer (zinc tin oxide) was subjected to soft annealing. The highest saturation field-effect mobility - 5.6 cm2 V-1 s-1 with a drain-to-source on-off current ratio (Ion/Ioff) of 2 × 108 - was achieved in the case of devices with 10-min soft-annealed zinc tin oxide thin films as the channel layer. The findings of this work identify soft annealing as a critical parameter for the processing of chemically derived thin-film transistors, and it correlates device performance to the changes in material structure induced by soft annealing. © 2013 American Chemical Society.en
dc.publisherAmerican Chemical Societyen
dc.subjectamorphous oxide semiconductoren
dc.subjectfield-effecten
dc.subjectsoft annealingen
dc.subjectsolution-processen
dc.subjectthin film transistoren
dc.subjectzinc tin oxideen
dc.titleImpact of soft annealing on the performance of solution-processed amorphous zinc tin oxide thin-film transistorsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentCore Labsen
dc.contributor.departmentFunctional Nanomaterials and Devices Research Groupen
dc.identifier.journalACS Applied Materials and Interfacesen
kaust.authorNayak, Pradipta K.en
kaust.authorHedhili, Mohamed N.en
kaust.authorCha, Dong Kyuen
kaust.authorAlshareef, Husam N.en
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