A versatile light-switchable nanorod memory: Wurtzite ZnO on perovskite SrTiO3

Handle URI:
http://hdl.handle.net/10754/562730
Title:
A versatile light-switchable nanorod memory: Wurtzite ZnO on perovskite SrTiO3
Authors:
Kumar, Anup Bera; Peng, Haiyang; Lourembam, James; Shen, Youde; Sun, Xiaowei; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
Integrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb-doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of ZnO and NSTO, a consistent nature of single crystallinity is achieved in the heterojunctions via the low-temperature solution-based hydrothermal growth. In addition to a high and persistent photoconductivity, the ZnO/NSTO heterojunction diode can be turned into a versatile light-switchable resistive switching memory with highly tunable ON and OFF states. The reversible modification of the effective interfacial energy barrier in the concurrent electronic and ionic processes most likely gives rise to the high susceptibility of the ZnO/NSTO heterojunction to external electric and optical stimuli. Furthermore, this facile synthesis route is promising to be generalized to other novel functional nanodevices integrating materials with diverse structures and properties. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC); Laboratory of Nano Oxides for Sustainable Energy
Publisher:
Wiley
Journal:
Advanced Functional Materials
Issue Date:
25-Apr-2013
DOI:
10.1002/adfm.201300509
Type:
Article
ISSN:
1616301X
Sponsors:
This work is partially supported by the National Research Foundation of Singapore through the Competitive Research Programme (CRP Award No. NRF-CRP-4-2008-04), the Science and Engineering Research Council, Agency for Science, Technology and Research (A*STAR) of Singapore (project No. 092 151 0088), and the National Natural Science Foundation of China (NSFC) (project Nos. 61006037 and 61076015).
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorKumar, Anup Beraen
dc.contributor.authorPeng, Haiyangen
dc.contributor.authorLourembam, Jamesen
dc.contributor.authorShen, Youdeen
dc.contributor.authorSun, Xiaoweien
dc.contributor.authorWu, Taoen
dc.date.accessioned2015-08-03T11:03:33Zen
dc.date.available2015-08-03T11:03:33Zen
dc.date.issued2013-04-25en
dc.identifier.issn1616301Xen
dc.identifier.doi10.1002/adfm.201300509en
dc.identifier.urihttp://hdl.handle.net/10754/562730en
dc.description.abstractIntegrating materials with distinct lattice symmetries and dimensions is an effective design strategy toward realizing novel devices with unprecedented functionalities, but many challenges remain in synthesis and device design. Here, a heterojunction memory made of wurtzite ZnO nanorods grown on perovskite Nb-doped SrTiO3 (NSTO) is reported, the electronic properties of which can be drastically reconfigured by applying a voltage and light. Despite of the distinct lattice structures of ZnO and NSTO, a consistent nature of single crystallinity is achieved in the heterojunctions via the low-temperature solution-based hydrothermal growth. In addition to a high and persistent photoconductivity, the ZnO/NSTO heterojunction diode can be turned into a versatile light-switchable resistive switching memory with highly tunable ON and OFF states. The reversible modification of the effective interfacial energy barrier in the concurrent electronic and ionic processes most likely gives rise to the high susceptibility of the ZnO/NSTO heterojunction to external electric and optical stimuli. Furthermore, this facile synthesis route is promising to be generalized to other novel functional nanodevices integrating materials with diverse structures and properties. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en
dc.description.sponsorshipThis work is partially supported by the National Research Foundation of Singapore through the Competitive Research Programme (CRP Award No. NRF-CRP-4-2008-04), the Science and Engineering Research Council, Agency for Science, Technology and Research (A*STAR) of Singapore (project No. 092 151 0088), and the National Natural Science Foundation of China (NSFC) (project Nos. 61006037 and 61076015).en
dc.publisherWileyen
dc.subjectelectron tunnelingen
dc.subjectpersistent photoconductivityen
dc.subjectresistive switchingen
dc.subjectSrTiO3en
dc.subjectZnOen
dc.titleA versatile light-switchable nanorod memory: Wurtzite ZnO on perovskite SrTiO3en
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Center (SPERC)en
dc.contributor.departmentLaboratory of Nano Oxides for Sustainable Energyen
dc.identifier.journalAdvanced Functional Materialsen
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singaporeen
dc.contributor.institutionSchool of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798, Singaporeen
dc.contributor.institutionSouth University of Science and Technology, 1088 Xue-Yuan Road, Shenzhen, Guangdong 518055, Chinaen
kaust.authorWu, Taoen
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