A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer

Handle URI:
http://hdl.handle.net/10754/562702
Title:
A top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayer
Authors:
Sun, Jian; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
An extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.
KAUST Department:
Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab
Publisher:
Institute of Electrical and Electronics Engineers
Journal:
IEEE Electron Device Letters
Issue Date:
Apr-2013
DOI:
10.1109/LED.2013.2247375
Type:
Article
ISSN:
07413106
Appears in Collections:
Articles; Electrical Engineering Program; Sensing, Magnetism and Microsystems Lab; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Jianen
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2015-08-03T11:02:10Zen
dc.date.available2015-08-03T11:02:10Zen
dc.date.issued2013-04en
dc.identifier.issn07413106en
dc.identifier.doi10.1109/LED.2013.2247375en
dc.identifier.urihttp://hdl.handle.net/10754/562702en
dc.description.abstractAn extraordinary magnetoresistance device is developed from an unpatterned semiconductor epilayer onto which the metal contacts are fabricated. Compared with conventionally fabricated devices, for which semiconductor patterning and precise alignment are required, this design is not only easier from a technological point of view, but it also has the potential to reduce damage introduced to the semiconductor during fabrication. The device shows a similar magnetoresistance ratio as a conventional one but it has a lower sensitivity. Because of the reduced resistance, and hence less noise, high magnetic field resolution is maintained. © 1980-2012 IEEE.en
dc.publisherInstitute of Electrical and Electronics Engineersen
dc.subjectExtraordinary magnetoresistanceen
dc.subjectmagnetic sensorsen
dc.subjectnoiseen
dc.subjectsemiconductor devicesen
dc.titleA top-contacted extraordinary magnetoresistance sensor fabricated with an unpatterned semiconductor epilayeren
dc.typeArticleen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.contributor.departmentElectrical Engineering Programen
dc.contributor.departmentSensing, Magnetism and Microsystems Laben
dc.identifier.journalIEEE Electron Device Lettersen
kaust.authorSun, Jianen
kaust.authorKosel, Jürgenen
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